Topology and electronic structure of flexible (Nb,Ru)O2 thermoelectrics

Topology and electronic structure of flexible (Nb,Ru)O2 thermoelectrics
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柔性(Nb,Ru)O2热电材料的拓扑和电子结构

DOI:
10.1088/1361-648x/aa53ac
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发表时间:
2017
期刊:
Journal of Physics: Condensed Matter
影响因子:
--
通讯作者:
J. Bednarcik
J. Bednarcik
中科院分区:
--
文献类型:
--
作者:
D. Music;V. Schnabel;J. Bednarcik

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采用组合反应溅射法,在二氧化物气氛中,在Ru/Nb比为0.5 ~ 1.1的Kapton(聚酰亚胺)衬底上制备了Nb-Ru-O薄膜。基于相关分析,包括同步辐射衍射实验和密度泛函理论,这些无定形样品的拓扑结构的特征在于短的金属-氧键和非常明显的金属-金属相互作用的第二配位壳层内。我们认为,Nb的作用是在键长减少和促进量子限制,从而引起塞贝克系数的增加。此外,这些Nb-Ru-O薄膜是机械柔性的,因为在弯曲或轧制时没有裂纹形成和分层。这可以合理化如下。Nb-Ru-O由于低拓扑连接性而呈现延展性,并与Kapton形成强键。
Using combinatorial reactive sputtering, we have synthesised Nb–Ru–O thin films on Kapton (polyimide) with the Ru/Nb ratio from 0.5 to 1.1 in a dioxide type of environment. Based on correlative analysis, including synchrotron diffraction experiments and density functional theory, the topology of these amorphous samples is characterised by short metal–oxygen bonds and very pronounced metal–metal interactions within the second coordination shell. We suggest that the role of Nb is within bond length reduction and promotion of quantum confinement, giving rise to an increase in the Seebeck coefficient. Furthermore, these Nb–Ru–O thin films are mechanically flexible as there are no crack formation and delamination upon bending or rolling. This may be rationalised as follows. Nb–Ru–O appears ductile due to low topological connectivity and forms strong bonds with Kapton.
热电 NbO 中的空位填充效应
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