Enhancing Structural Properties and Performance of Graphene-Based Devices Using Self-Assembled HMDS Monolayers.
Enhancing Structural Properties and Performance of Graphene-Based Devices Using Self-Assembled HMDS Monolayers.
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DOI：
10.1021/acsomega.0c05631
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发表时间：
2021-02-23
期刊：
影响因子：
4.1
通讯作者：
Klein N
中科院分区：
文献类型：
--
作者：
Ramadan S;Zhang Y;Tsang DKH;Shaforost O;Xu L;Bower R;Dunlop IE;Petrov PK;Klein N
石墨烯器件的性能通常受到器件制造过程中引入的缺陷和杂质的限制。光致抗蚀剂处理后留在石墨烯表面上的聚合物残留物会增加电子散射并阻碍电子传输。此外，将石墨烯暴露于基于等离子体的处理（诸如金属化层的溅射）可以增加石墨烯中的缺陷密度并改变器件性能。因此，在薄膜沉积和器件制造过程中保持石墨烯的高质量表面对于许多电子应用至关重要。在这里，我们表明，使用自组装单分子层（SAM）的六甲基二硅氮烷（HMDS）作为缓冲层在石墨烯的设备制造过程中，可以显着减少损坏，提高石墨烯的质量，并提高设备的性能。使用表面分析技术和电学测量系统地研究了HMDS的作用。HMDS处理的益处包括与经处理的石墨烯相比缺陷密度的显著降低和接触电阻的2倍以上降低。这种表面处理简单，为改善石墨烯器件界面提供了一条实用的途径，这对于将石墨烯集成到电子和传感器器件等功能器件中非常重要。
The performance of graphene devices is often limited by defects and impurities induced during device fabrication. Polymer residue left on the surface of graphene after photoresist processing can increase electron scattering and hinder electron transport. Furthermore, exposing graphene to plasma-based processing such as sputtering of metallization layers can increase the defect density in graphene and alter the device performance. Therefore, the preservation of the high-quality surface of graphene during thin-film deposition and device manufacturing is essential for many electronic applications. Here, we show that the use of self-assembled monolayers (SAMs) of hexamethyldisilazane (HMDS) as a buffer layer during the device fabrication of graphene can significantly reduce damage, improve the quality of graphene, and enhance device performance. The role of HMDS has been systematically investigated using surface analysis techniques and electrical measurements. The benefits of HMDS treatment include a significant reduction in defect density compared with as-treated graphene and more than a 2-fold reduction of contact resistance. This surface treatment is simple and offers a practical route for improving graphene device interfaces, which is important for the integration of graphene into functional devices such as electronics and sensor devices.
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