Nanoscratching of copper surface by CeO2
Nanoscratching of copper surface by CeO2
复制标题
CeO2对铜表面的纳米划伤
DOI:
10.1016/j.actamat.2016.11.008
复制
发表时间:
2017-02
期刊:
影响因子:
9.4
通讯作者:
Shan Zhiwei
中科院分区:
文献类型:
--
作者:
Xu Ning;Han Weizhong;Wang Yuchun;Li Ju;Shan Zhiwei
CeO2nanoparticles based slurries are widely used for chemical mechanical polishing in integrated circuit manufacturing. However, the fundamental processes of material removal and planarization remain elusive. By combining a nanoindenter system with a homemade CeO2tip, we investigated the nanoscratching behavior of copper film quantitatively under both constant load and ramp load modes. Based on the evolution of the coefficient of friction, the nanoscratching behavior can be divided into three regimes. For regime I, the coefficient of friction decreases sharply along with the increasing normal load and the copper undergoes mainly elastic deformation. The friction wear begins to enter regime II once the normal load reaches a critical value from where both the coefficient of friction and scratch damage begin to exhibit a changing elastic-plastic characteristic with the increasing of normal load. In regime III, the coefficient of friction reaches a steady value and becomes independent of the normal load and the deformation of copper film enters a steady elastic-plastic state. The coefficient of friction in regime I and II can be well modeled by Hertz contact theory and the classical friction models, respectively. Detailed analysis demonstrates the transition between the two models occurs when the stress concentration approaches the yield strength of copper and the material removal rate can be predicted by adjusting the parameter of the normal force and the abrasive particle size.
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DOI:
10.1007/978-3-540-73448-2_6
发表时间:
2007
期刊:
--
影响因子:
--
作者:
J. Rösler;M. Bäker;H. Harders
通讯作者:
J. Rösler;M. Bäker;H. Harders
影响因子:
3.9
作者:
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通讯作者:
Singha, Rajiv K.
影响因子:
5
作者:
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通讯作者:
M. Cho;S. Kim;D. Lim;H. Jang
影响因子:
--
作者:
Liangchi Zhang;K. Mylvaganam
通讯作者:
Liangchi Zhang;K. Mylvaganam
影响因子:
5
作者:
Zhao, YW;Chang, L
通讯作者:
Chang, L