Highly (001)-oriented zirconium-doped ceria films grown on biaxially textured nickel tungsten substrates through an inorganic-salts-based chemical solution deposition route

Highly (001)-oriented zirconium-doped ceria films grown on biaxially textured nickel tungsten substrates through an inorganic-salts-based chemical solution deposition route
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通过基于无机盐的化学溶液沉积途径在双向织构的镍钨基底上生长高度(001)取向的锆掺杂二氧化铈薄膜

DOI:
10.1016/j.ceramint.2018.06.039
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发表时间:
2018-09
影响因子:
5.2
通讯作者:
Pingxiang Zhang
Pingxiang Zhang
中科院分区:
材料科学1区
文献类型:
--
作者:
Li Lei;Limin Li;Shasha Wang;Jiqiang Jia;Gaoyang Zhao;Yoshifumi Oshima;Lihua Jin;Yao Wang;Chengshan Li;Pingxiang Zhang

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采用溶胶-凝胶法在双轴织构NiW合金衬底上制备了具有(001)择优取向的Zr掺杂CeO 2(Ce 1-xZrxO 2,CZO)薄膜。前驱体溶液是通过一种新开发的工艺合成的,使用常见的无机金属盐的锆和铈作为起始原料,而不是有机盐。研究了退火温度和Ce/Zr摩尔比对CZO薄膜织构的影响。将浓度为0.3mol/L的前驱体溶液使用浸涂法涂覆在Ni 5 W基底上,然后在具有5vol%H2的高纯Ar的还原气氛下在1050 °C下热处理1小时。当Zr含量小于40%时,薄膜具有良好的c轴择优取向。CZO薄膜的(111)反射的phi扫描和(200)反射的omega扫描的半峰全宽分别低至约5°和6°。扫描电镜分析表明,CZO薄膜内部致密均匀,无裂纹和孔隙,同时证实了CZO和NiW之间的(220)CZO//(200)NiW外延生长关系。最后在CZO缓冲NiW衬底上制备了具有良好超导性能的高(00 l)取向YBCO薄膜。上述结果表明,CZO薄膜是一个很有前途的候选单缓冲层结构的YBCO涂层导体。
In this work, Zr-doped CeO2(Ce1-xZrxO2, CZO) films with (001) preferential orientation were fabricated on biaxially textured NiW alloy substrates by using a novel sol-gel method. The precursor solutions were synthesized through a newly developed process using common inorganic metal salts of Zr and Ce as the starting materials instead of organic salts. The influence of annealing temperature and the Ce/Zr mole ratio in the precursor solutions on the growth texture of CZO films was investigated. The precursor solutions with the concentration of 0.3 mol/L were coated on the Ni5W substrates using a dip-coating method and then heat-treated at 1050 °C for an hour under a reducing atmosphere of high-purity Ar with 5 vol% H2. The CZO thin films show excellent c-axis preferential orientation when the content of Zr in CZO thin film is less than 40%. The full width of half maximum of the phi scan of (111) reflection and omega scan of (200) reflection of CZO films is as low as the value of about 5° and 6°, respectively. Moreover, it is found that the inside of CZO thin film exhibits quite dense and uniform without cracks and porosity with the aid of the scanning transmission electron microscopy analysis by which the epitaxial growth relationship of (220)CZO// (200)NiWbetween CZO and NiW is simultaneously confirmed. Finally, highly (00l)-oriented YBCO film with good superconducting properties was deposited on CZO buffered NiW substrate. The above results indicate that the CZO film is a quite promising candidate of single buffer layer architecture for YBCO coated conductor.
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