High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting
High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting
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通过共注入和纳秒脉冲激光熔化对应变锗进行高水平活性n掺杂
DOI：
10.1063/1.5012512
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发表时间：
2018
影响因子：
3.2
通讯作者：
M. Aziz
中科院分区：
文献类型：
--
作者：
D. Pastor;Hemi H. Gandhi;Corentin Monmeyran;A. Akey;R. Milazzo;Yan Cai;E. Napolitani;R. Gwilliam;I. Crowe;J. Michel;L. Kimerling;A. Agarwal;E. Mazur;M. Aziz
在锗 (Ge) 中获得高水平的活性 n+ 载流子浓度一直是 Ge 器件进一步开发的重大挑战。通过将磷 (P) 和氟 (F) 离子注入 Ge 并使用 Nd:YAG 纳秒脉冲激光熔化 (PLM) 恢复结晶度，我们证明了硅上拉伸应变外延锗的 1020 cm−3 n+ 载流子浓度。扫描电镜显示，经激光处理后，P注入的样品表面被烧蚀，而P + F共注入的样品具有良好的结晶度和光滑的表面形貌。我们使用二次离子质谱和扩散阻力分析来表征 P 和 F 浓度深度分布。表面以下 80 nm 处的峰值载流子浓度为 1020 cm−3，与峰值 F 浓度一致，说明 F 在增加供体激活中的关键作用。共植入样品的横截面透射电子显微镜显示，Ge 外延层区域在植入过程中受损。
Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm−3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm−3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during impla...
使用非非晶化氟共注入技术改善了磷供体在锗中的保留
影响因子：
3.2
作者：
Monmeyran C
通讯作者：
Monmeyran C
影响因子：
3.8
作者：
Koerner, Roman;Oehme, Michael;Schulze, Joerg
通讯作者：
Schulze, Joerg