Electronic properties of aluminum/CdZnTe interfaces

Electronic properties of aluminum/CdZnTe interfaces
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铝/CdZnTe界面的电子特性

DOI:
10.1063/1.4804365
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发表时间:
2013-05
影响因子:
4
通讯作者:
Jia, Jinfeng
Jia, Jinfeng
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Wang, Tao;Qian, Dong;Liu, Ying;Jia, Jinfeng

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了解 CdZnTe 辐射探测器的宏观器件性能与原子水平上的接触形成之间的复杂相关性仍然是一个巨大的挑战。在这项工作中,通过使用光电子能谱系统研究 Al/CdZnTe(111)A 和 Al/CdZnTe(111)B 界面中的电子结构(Al 覆盖范围从亚单层到多层),努力弥合宏纳米知识差距。在这两个界面中发现电子态的显着差异。在室温下观察到 Al 和 CdZnTe(111)A 之间存在强烈的相互作用,并形成厚的界面层 (>12nm)。相反,在Al/CdZnTe(111)B界面处形成了厚度约为一个原子层(~0.3nm)的混合层。
Understanding complex correlations between the macroscopic device performance and the contact formation on the atomic level in CdZnTe radiation detectors remains an enormous challenge. In this work, an effort towards bridging that macro-nano knowledge gap is made by systematic study of the electronic structures in the interface of Al/CdZnTe(111)A and Al/CdZnTe(111)B with Al coverage from sub-monolayer to multilayers using photoemission spectroscopy. Remarkable difference of the electronic states was found in these two interfaces. A strong interaction between Al and CdZnTe(111)A was observed at room temperature and thick interface layers (>12 nm) formed. In contrast, an intermix layer with a thickness of about one atomic layer (∼0.3 nm) was formed at Al/CdZnTe(111)B interface.
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期刊: --
影响因子: --
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