A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices.
A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices.
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DOI：
10.1039/d3na00525a
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发表时间：
2023-11-07
影响因子：
4.7
通讯作者：
Zhang, Changjin
中科院分区：
文献类型：
--
作者：
Hu, Huijie;Zhen, Weili;Yue, Zhilai;Niu, Rui;Xu, Feng;Zhu, Wanli;Jiao, Keke;Long, Mingsheng;Xi, Chuanying;Zhu, Wenka;Zhang, Changjin
由于其独特的组合结构和内置电场的形成，混合维异质结为提高低维光电器件的光电性能提供了丰富的可能性。然而，大多数由混合维异质结构建的光电探测器的响应时间在毫秒范围内，限制了它们在快速响应光电器件中的应用。在520 nm激光激发下，设计了一种混合维BiSeI/GaSe范德华异质结构，具有750 a W−1的可见光探测能力和2.25 × 1012 Jones的比探测率。器件在520 nm激光激发下的上升时间为65 μs，衰减时间为190 μs，具有非常快的响应速度。我们的研究结果为具有快速开关能力的混合维异质结光探测器件提供了一种前瞻性的方法。优化设计，响应速度快。
Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W−1 and specific detectivity of 2.25 × 1012 Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities. Optimized design and fast response speed.
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影响因子：
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