Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors.
Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors.
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DOI：
10.1038/s41598-017-05391-0
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发表时间：
2017-07-10
影响因子：
4.6
通讯作者：
Lin CF
中科院分区：
文献类型：
--
作者：
Fan FH;Syu ZY;Wu CJ;Yang ZJ;Huang BS;Wang GJ;Lin YS;Chen H;Hauer Kao C;Lin CF
提出了一种GaN/AlGaN紫外发光二极管（UV-LED）结构。在UV-LED内部，通过掺杂选择性电化学蚀刻工艺将n+-AlGaN/undoped-AlGaN堆叠结构转化为多孔AlGaN/undoped-AlGaN堆叠结构。多孔AlGaN反射器在374 nm处的反射率为93%，截止带宽为35 nm。在反射率随角度变化的测量中，当光入射角从10°增加到50°时，多孔AlGaN反射器的中心波长出现蓝移现象。由于多孔AlGaN/u-AlGaN叠层结构的材料吸收，在349 nm处观察到截止波长。在经处理的UV-LED结构中，在多孔AlGaN反射器覆盖的106°发散角下，在362 nm处测量光致发光发射波长。处理后的UV-LED结构的光输出功率高于未处理的UV-LED结构，这是由于嵌入的多孔AlGaN反射器上的高光反射率。
A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electrochemical etching process. The reflectivity of the porous AlGaN reflector was 93% at 374 nm with a stop-bandwidth of 35 nm. In an angle-dependent reflectance measurement, the central wavelength of the porous AlGaN reflector had blueshift phenomenon by increasing light-incident angle from 10° to 50°. A cut-off wavelength was observed at 349 nm due to the material absorption of the porous-AlGaN/u-AlGaN stack structure. In the treated UV-LED structure, the photoluminescence emission wavelength was measured at 362 nm with a 106° divergent angle covered by the porous-AlGaN reflector. The light output power of the treated UV-LED structure was higher than that of the non-treated UV-LED structure due to the high light reflectance on the embedded porous AlGaN reflector.
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