Insertion of parylene-N films in electron transport layer: An effective approach for efficiency improvement of organic light emitting diodes
Insertion of parylene-N films in electron transport layer: An effective approach for efficiency improvement of organic light emitting diodes
复制标题
在电子传输层中插入聚对二甲苯-N薄膜：提高有机发光二极管效率的有效途径
DOI：
10.1063/1.4767069
复制
发表时间：
2012-11
影响因子：
3.2
通讯作者：
H.Peng
中科院分区：
文献类型：
--
作者：
Y.Q.Zhan;Y.T.You;H.N.Xuxie;H.Peng
通过在Alq3层中插入合适厚度和位置的PPXN缓冲层，可以明显提高三（8-羟基喹啉）铝（Alq3）基有机发光二极管的效率。优化后的PPXN插入结构的电流效率为6.89 cd/A，发光功率效率为1.85 lm/W；两者分别比无缓冲结构的4.84 cd/A和1.30 lm/W高42%。4-二氰亚甲基-2-甲基-6-对-二甲氨基苯基- 4h -吡喃（DCM）掺杂Alq3 （Alq3:DCM）条带的发光光谱显示，电子电流增强导致PPXN插入器件的效率提高。器件电流的演变可以用有机层中不均匀的电位分布和隧道势垒的减少来解释。
Efficiency of tris (8-hydroxyquinolato) aluminum (Alq3) based organic light emitting diodes has been obviously improved by inserting a parylene-N (PPXN) buffer layer with proper thickness and location in the Alq3 layer. For an optimized PPXN inserted structure, current efficiency of 6.89 cd/A and luminous power efficiency of 1.85 lm/W were achieved; both are 42% higher than the 4.84 cd/A and 1.30 lm/W of the buffer free structure, respectively. The light emitting spectra of 4-dicyanomethylene-2-methyl-6-p-dimethylaminostyryl-4H-pyran (DCM) doped Alq3 (Alq3:DCM) strips showed the electron current enhancement resulted in the observed efficiency improvement of PPXN inserted devices. The device current evolutions were explained by nonuniform potential distribution in the organic layer and the tunneling barrier reduction.
登录
查看更多内容
影响因子：
4
作者：
Saifeng Zhang;Y. C. Zhou;J. Zhao;Y. Zhan;Z. Wang;Y. Wu;X. Ding;X. Hou
通讯作者：
Saifeng Zhang;Y. C. Zhou;J. Zhao;Y. Zhan;Z. Wang;Y. Wu;X. Ding;X. Hou
DOI：
10.1088/0022-3727/35/2/302
发表时间：
2002-01
期刊：
Journal of Physics D
影响因子：
--
作者：
L. Hung;Ruiqin Q. Zhang;P. He;G. Mason
通讯作者：
L. Hung;Ruiqin Q. Zhang;P. He;G. Mason
影响因子：
3.2
作者：
Jeongho Kim;Myungseop Kim;Jeong Won Kim;Y. Yi;Heon Kang
通讯作者：
Jeongho Kim;Myungseop Kim;Jeong Won Kim;Y. Yi;Heon Kang
影响因子：
4
作者：
X. Yin;Y. Le;X. D. Gao;Z. Sun;X. Hou
通讯作者：
X. Yin;Y. Le;X. D. Gao;Z. Sun;X. Hou
影响因子：
3.2
作者：
M. Son;Sehun Kim;Soonnam Kwon;Jeong Won Kim
通讯作者：
M. Son;Sehun Kim;Soonnam Kwon;Jeong Won Kim