Low Temperature Production of Lead-Free Piezoelectric Thick Films

Low Temperature Production of Lead-Free Piezoelectric Thick Films
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无铅压电厚膜的低温生产

DOI:
10.1080/00150193.2011.594724
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发表时间:
2011
期刊:
影响因子:
0.8
通讯作者:
Lusiola T
Lusiola T
中科院分区:
材料科学4区
文献类型:
--
作者:
Lusiola T

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无铅压电材料的重要性随着环境问题的增加和随后的欧盟立法而增加。下一代无铅压电材料与基板的集成,以形成功能的微型器件受到较少的关注。采用低温熔盐粉末合成法和混合粉末/溶胶-凝胶油墨膜法在基底上制备了无铅NaNbO 3/Ka0.5Na0.5NbO3厚膜。薄膜具有铁电性,压电系数在18 pC/N左右。
Lead-free piezoelectric materials have grown in importance through increased environmental concern and subsequent EU legislation. Integration of the next generation lead-free piezoelectric materials with substrates to form functional micro devices has received less attention. A low temperature molten salt powder synthesis combined with a hybrid powder/sol gel ink film have been used to produce lead free NaNbO3/Ka0.5Na0.5NbO3thick films on substrates. The films have exhibited ferroelectric behaviour with piezoelectric coefficients in the region of 18pC/N.
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