Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment
Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment
复制标题
NH3-等离子体处理修复氧空位并改善 HfO2/MoS2 界面
DOI:
10.1109/ted.2019.2934186
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发表时间:
2019-10
影响因子:
3.1
通讯作者:
Wing-Man Tang
中科院分区:
文献类型:
--
作者:
Xinyuan Zhao;Jingping Xu;Lu Liu;Pui-To Lai;Wing-Man Tang
The effects of treating the HfO2 gate dielectric in different plasmas (O2, N2, and NH3) on the electrical characteristics of a back-gated MoS2 transistor are investigated. It is found that the electri
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影响因子:
16.6
作者:
Zhang, Gang;Zhang, Yong Wei;Shi, Yi;Wang, Xinran
通讯作者:
Wang, Xinran
影响因子:
3.5
作者:
Jingping Xu;Ming Wen;Xinyuan Zhao;Lu Liu;Xingjuan Song;Pui-To Lai;Wing-Man Tang
通讯作者:
Wing-Man Tang
影响因子:
4.9
作者:
Liu, Han;Gu, Jiangjiang;Ye, Peide D.
通讯作者:
Ye, Peide D.
影响因子:
41.2
作者:
Radisavljevic, Branimir;Kis, Andras
通讯作者:
Kis, Andras
影响因子:
4
作者:
Choopun, S;Vispute, RD;Look, DC
通讯作者:
Look, DC