Investigating the sources of low-energy events in a SuperCDMS-HVeV detector
Investigating the sources of low-energy events in a SuperCDMS-HVeV detector
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研究 SuperCDMS-HVeV 探测器中低能事件的来源
DOI：
10.1103/physrevd.105.112006
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发表时间：
2022
影响因子：
5
通讯作者：
Bathurst, C.
中科院分区：
文献类型：
--
作者：
Albakry, M. F.;Alkhatib, I.;Amaral, D. W. P.;Aralis, T.;Aramaki, T.;Arnquist, I. J.;Ataee Langroudy, I.;Azadbakht, E.;Banik, S.;Bathurst, C.
最近寻找暗物质的实验已经观察到接近它们各自能量阈值的事件过量。虽然具体到个别技术，测量的过量事件率一直报告在或低于几百eV的事件能量，或与几个电子空穴对的电荷。在目前的工作中，我们在晶体上的三个电压（0，60和100 V）下操作1克硅SuperCDMS-HVeV检测器。0 V数据显示数十eV区域中的事件过多。尽管这一事件过量，我们证明了有能力设置一个竞争性的排斥限制的自旋无关的暗物质核子弹性散射截面的暗物质质量，使操作的检测器在0 V的电位和实现一个非常lowthreshold核反冲。比较在0，60和100 V的晶体电位下获得的数据，我们研究了在低能量下观察到的意外事件的可能来源。数据表明，对过量的主要贡献与探测器保持器中使用的印刷电路板的假设发光一致。
Recent experiments searching fordark matter have observed event excesses close to their respective energy thresholds. Although specific to the individual technologies, the measured excess event rates have been consistently reported at or below event energies of a few-hundred eV, or with charges of a few electron-hole pairs. In the present work, we operated a 1-g silicon SuperCDMS-HVeV detector at three voltages across the crystal (0, 60 and 100 V). The 0 V data show an excess of events in the tens of eV region. Despite this event excess, we demonstrate the ability to set a competitive exclusion limit on the spin-independent dark matter–nucleon elastic scattering cross section for dark matter masses of, enabled by operation of the detector at 0 V potential and achievement of a very lowthreshold for nuclear recoils. Comparing the data acquired at 0, 60 and 100 V potentials across the crystal, we investigated possible sources of the unexpected events observed at low energy. The data indicate that the dominant contribution to the excess is consistent with a hypothesized luminescence from the printed circuit boards used in the detector holder.
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