Two types of luminescence blinking revealed by spectroelectrochemistry of single quantum dots.
Two types of luminescence blinking revealed by spectroelectrochemistry of single quantum dots.
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DOI:
10.1038/nature10569
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发表时间:
2011-11-09
期刊:
影响因子:
64.8
通讯作者:
Htoon, Han
中科院分区:
文献类型:
--
作者:
Galland, Christophe;Ghosh, Yagnaseni;Steinbrueck, Andrea;Sykora, Milan;Hollingsworth, Jennifer A.;Klimov, Victor I.;Htoon, Han
Photoluminescence (PL) intermittency (blinking), or random switching between states of high- (ON) and low (OFF) emissivities, is a universal property of molecular emitters exhibited by dyes, polymers, biological molecules and artificial nanostructures such as nanocrystal quantum dots, carbon nanotubes, and nanowires. For the past fifteen years, colloidal nanocrystals have been used as a model system for studies of this phenomenon. The occurrence of OFF periods in nanocrystal emission has been commonly attributed to the presence of an additional charge, which leads to PL quenching by nonradiative Auger recombination. However, the “charging” model was recently challenged in several reports. Here, to clarify the role of charging in PL intermittency, we perform time-resolved PL studies of individual nanocrystals while controlling electrochemically the degree of their charging. We find that two distinct mechanisms can lead to PL intermittency. We identify conventional blinking (A-type) due to charging/discharging of the nanocrystal core when lower PL intensities correlate with shorter PL lifetimes. Importantly, we observe a different blinking (B-type), when large changes in the PL intensity are not accompanied by significant changes in PL dynamics. We attribute this blinking behavior to charge fluctuations in the electron-accepting surface sites. When unoccupied, these sites intercept hot electrons before they relax into emitting core states. Both blinking mechanisms can be controlled electrochemically and under appropriate potential blinking can be completely suppressed.
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影响因子:
2.8
作者:
Vela, Javier;Htoon, Han;Chen, Yongfen;Park, Young-Shin;Ghosh, Yagnaseni;Goodwin, Peter M.;Werner, James H.;Wells, Nathan P.;Casson, Joanna L.;Hollingsworth, Jennifer A.
通讯作者:
Hollingsworth, Jennifer A.
影响因子:
10.8
作者:
Garcia-Santamaria, Florencio;Brovelli, Sergio;Klimov, Victor I.
通讯作者:
Klimov, Victor I.
影响因子:
3.3
作者:
Houtepen, AJ;Vanmaekelbergh, D
通讯作者:
Vanmaekelbergh, D
影响因子:
3.7
作者:
Klimov, V. I.;McGuire, J. A.;Rupasov, V. I.
通讯作者:
Rupasov, V. I.
影响因子:
56.9
作者:
Klimov, VI;Mikhailovsky, AA;Bawendi, MG
通讯作者:
Bawendi, MG