Effects of Sputtering Gas Conditions on Formation of (112̄0) Textured ZnO Films

Effects of Sputtering Gas Conditions on Formation of (112̄0) Textured ZnO Films
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溅射气体条件对(112̄0)织构ZnO薄膜形成的影响

DOI:
10.1143/jjap.46.4660
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发表时间:
2007
影响因子:
1.5
通讯作者:
Yoshiaki Watanabe
Yoshiaki Watanabe
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
T. Kawamoto;T. Yanagitani;M. Matsukawa;Yoshiaki Watanabe

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ZnO薄膜中的微晶c轴在衬底平面内单向排列[(112 <$0)织构ZnO薄膜]使得能够在超高频(UHF)范围内实现剪切模式器件。在本研究中,我们研究了(112 <$0)织构ZnO薄膜,重点是溅射沉积过程中的氧气和氩气的总气压和分气压的影响。通过X射线衍射(XRD)分析测量了薄膜的晶体学特征。此外,从RF等离子体的光发射进行了分析,以调查的离子物种的ZnO薄膜的生长的效果。在低总气压和高氧气浓度条件下,获得了高度结晶的(112 <$0)织构ZnO薄膜。在这些条件下,观察到来自氧物种的强光学发射光谱。从这些结果中,我们得出结论,高能氧粒子轰击衬底有助于(112 <$0)织构的形成。具有3.3°的ω-扫描摇摆曲线FWHM的膜显示出0.16的k15值,这是单晶的值的62%。
The ZnO films in which the crystallite c-axis is unidirectionally aligned in the substrate plane [(112̄0) textured ZnO films] enable the realization of shear mode devices in the ultra high frequency (UHF) range. In this study, we have investigated the (112̄0) textured ZnO film, focusing on the effect of total gas pressure and partial gas pressure of oxygen and argon during sputtering deposition. The crystallographic characteristics of the films were measured by X-ray diffraction (XRD) analysis. In addition, optical emissions from the RF plasma were analyzed to investigate the effect of ionic species on the growth of the ZnO films. Highly crystallized (112̄0) textured ZnO films were obtained under the conditions of low total gas pressure and high oxygen gas concentration. Under these conditions, strong optical emission spectra from oxygen species were observed. From these results, we conclude that energetic oxygen particle bombardment to the substrate contributes to the (112̄0) texture formation. The film with an ω-scan rocking curve FWHM of 3.3° showed a k15 value of 0.16, which was 62% of the value for a single crystal.
DOI: --
发表时间: 2005
期刊: Jpn.J.Appl.Phys. 44・6B
影响因子: --
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射频磁控溅射制备的 (11-20) 织构 ZnO 薄膜的表征
DOI: --
发表时间: 2004
期刊: Japanese Journal of Applied Physics Vol.43
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期刊: Japanese Journal of Applied Physics Vol.45
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