Quantized charge transport driven by a surface acoustic wave in induced unipolar and bipolar junctions
Quantized charge transport driven by a surface acoustic wave in induced unipolar and bipolar junctions
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感应单极和双极结中表面声波驱动的量子化电荷传输
DOI：
10.1103/physrevb.100.245401
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发表时间：
2019
影响因子：
3.7
通讯作者：
Chung Y
中科院分区：
文献类型：
--
作者：
Chung Y
表面声波（SAW）已经被用于在几百微米的长距离上传输单个电子。通过促进遥远的量子比特之间的相互作用，它们可能有助于实现可扩展的量子处理器和量子中继器。虽然迄今为止的大部分工作都集中在SAW器件在掺杂GaAs/AlGaAs异质结，我们已经开发出一种方法，创建lateraljunctions在一个未掺杂的异质结包含一个量子阱，具有预期的优势，减少了电荷噪声和增加自旋相干寿命，由于缺乏掺杂剂散射中心。我们目前的SAW驱动的单电子量子化电流在未掺杂的GaAs/AlGaAs异质结，其中单个电子之间的区域感生电子传输的实验观察。我们还演示了电子泵浦声表面波整个亚微米耗尽通道之间的区域的电子和空穴，并观察在这样的lateraljunction光发射。改善在结中的横向限制应该使其有可能产生量子化的电子-空穴电流，因此SAW驱动的单光子发射。
Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have developed a method of creating lateraljunctions in an undoped heterostructure containing a quantum well, with the expected advantages of having reduced charge noise and increased spin-coherence lifetimes due to the lack of dopant scattering centers. We present experimental observations of SAW-driven single-electron quantized current in an undoped GaAs/AlGaAs heterostructure, where single electrons were transported between regions of induced electrons. We also demonstrate pumping of electrons by a SAW across the submicron depleted channel between regions of electrons and holes, and observe light emission at such a lateraljunction. Improving the lateral confinement in the junction should make it possible to produce a quantized electron-to-hole current and hence SAW-driven emission of single photons.
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作者：
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DOI：
10.1007/978-3-319-24091-6
发表时间：
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期刊：
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影响因子：
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影响因子：
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作者：
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