Thermal conductivities and mechanical properties of AlN ceramics fabricated by three dimensional printing

Thermal conductivities and mechanical properties of AlN ceramics fabricated by three dimensional printing
复制标题

三维打印AlN陶瓷的热导率和力学性能

DOI:
10.1016/j.jeurceramsoc.2020.04.004
复制
发表时间:
2020-08
影响因子:
5.7
通讯作者:
Gong Wang
Gong Wang
中科院分区:
材料科学1区
文献类型:
--
作者:
Wenyan Duan;Shan Li;Huihui Tan;Li Wang;Yubei Zhang;Haiqing Li;Rui Dou;Gong Wang

文献摘要

参考文献

被引文献

相似文献

通过数字光处理(DLP) 3D打印技术和在1780°C ~ 1845°C下热处理的联合工艺,成功制备了AlN陶瓷。DLP是一种上瘾的制造工艺,可以实现近净形状制造。本研究的AlN晶粒发育良好,在三晶交界处存在少量的晶界相。随着烧结温度的升高,AlN的粒径增大,致密化程度提高。AlN陶瓷的孔隙也减少,导致导热系数和抗弯强度增加。在1845℃烧结时,AlN陶瓷的最佳导热系数和抗弯强度分别达到155 W/(m·K)和265±20 MPa。
AlN ceramics were successfully fabricated through a joint process of digital light processing (DLP) 3D printing technology and heat treatment at 1780 °C∼1845 °C. DLP is an addictive manufacturing process, enabling the near net shape fabrication. The AlN grains in this work developed well and there were small amounts of grain-boundary phases at the three-grain junctions. The particle size of AlN became larger and the densification increased with increasing sintering temperature. The pores of AlN ceramics also decreased, which led to the increase of thermal conductivity and flexural strength. The optimal thermal conductivity and flexural strength of AlN ceramic reached 155 W/(m·K) and 265 ± 20 MPa when sintered at 1845 °C.
DOI: 10.1016/j.ceramint.2013.02.023
发表时间: 2013-08
影响因子: 5.2
作者:
K. Kate;R. Enneti;V. Onbattuvelli;S. Atre
通讯作者: K. Kate;R. Enneti;V. Onbattuvelli;S. Atre
用于宽带电磁吸收的 3D 打印 SiC 纳米线增强复合材料
DOI: 10.1016/j.ceramint.2019.03.015
发表时间: 2019
影响因子: 5.2
作者:
Xiao Shanshan;Mei Hui;Han Daoyang;Cheng Laifei
通讯作者: Cheng Laifei
DOI: 10.1016/0921-5107(91)90092-a
发表时间: 1991-09
影响因子: 3.6
作者:
S. Surnev;D. Lepkova;A. Yoleva
通讯作者: S. Surnev;D. Lepkova;A. Yoleva
DOI: 10.1016/j.ceramint.2018.07.178
发表时间: 2018-11-01
影响因子: 5.2
作者:
Huang, Dong;Tian, Zhaobo;Liu, Guanghua
通讯作者: Liu, Guanghua
DOI: 10.1111/j.1151-2916.1991.tb08291.x
发表时间: 1991-09
影响因子: 3.9
作者:
R. Lee
通讯作者: R. Lee