The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping
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氧压和Li掺杂控制Zn空位对Cu掺杂ZnO薄膜铁磁性的影响

DOI:
10.1088/1674-1056/22/6/067503
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发表时间:
2013-06
期刊:
影响因子:
1.7
通讯作者:
Yong, Jiang
Yong, Jiang
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Farooq, Hassan M.;Zhou Li-Gong;Xu Xiao-Guang;Yong, Jiang

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对Zn_(0.99)Cu_(0.01)O薄膜进行了理论和实验研究。采用脉冲激光沉积法在Pt(111)/Ti/SiO2/Si衬底上制备了不同氧分压下的薄膜,研究了薄膜的铁磁性能随氧分压的变化。对薄膜的结构、磁性和光学性质进行了研究,发现所有样品都具有典型的纤锌矿结构,薄膜具有室温铁磁性。样本是在600?C和氧压为10 Pa的大的饱和磁化强度为0.83?B/Cu。第一性原理计算表明,(Cu,Li)共掺杂ZnO的铁磁性增强归因于Zn空位(VZn)的存在。光致发光分析表明,在Zn 0. 99 Cu 0. 01 O和(Cu,Li)共掺杂ZnO薄膜中均存在VZn,这对铁磁性的增强起着重要作用。
Zn0.99Cu0.01O films were studied experimentally and theoretically. The films were prepared by pulsed-laser deposition on Pt(111)/Ti/SiO2/Si substrates under various oxygen pressures to investigate the growth-dependence of the ferromagnetic properties. The structural, magnetic, and optical properties were studied, and it was found that all the samples possess a typical wurtzite structure, and that the films exhibit room-temperature ferromagnetism. The sample deposited at 600 ?C and an oxygen pressure of 10 Pa showed a large saturation magnetization of 0.83 ?B/Cu. The enhanced ferromagnetism in the (Cu, Li)-codoped ZnO is attributable to the existence of Zn vacancies (VZn), as shown by first-principles calculations. The photoluminescence analysis demonstrated the existence of VZn in both Zn0.99Cu0.01O and (Cu, Li)-codoped ZnO thin films, and this plays an important role in the increase of ferromagnetism, according to the results of first-principles calculations.
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