Interface structure and deformation mechanisms of AlN/GaN multilayers
Interface structure and deformation mechanisms of AlN/GaN multilayers
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AlN/GaN多层膜的界面结构和变形机制
DOI：
10.1016/j.ceramint.2020.01.182
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发表时间：
2020-06
影响因子：
5.2
通讯作者：
Peng Xianghe
中科院分区：
文献类型：
--
作者：
Li Haitao;Xiang Henggao;Huang Hongzhi;Zeng Ziwen;Peng Xianghe
Experimental results show that nano-ceramic/ceramic multilayers have excellent properties, and the deformation mechanisms need further investigation. In this work, molecular dynamics simulations were performed to study the interface structure of an AlN/GaN multilayer as well as the deformation mechanisms under uniform tensile/compressive loadings. After relaxation, a hexagonal misfit dislocation structure was observed at the interface. Analysis revealed that the misfit dislocation lines, surrounded by coherent regions, are of edge type. Unlike metal/metal multilayers and metal/ceramic multilayers, the stress-strain curve of the AlN/GaN multilayer subjected to in-plane loading shows only single main yield point. This is because that dislocations nucleate from the interface and emit into both layers almost simultaneously. A rhombus network was observed in GaN layer, attributed to the slip of dislocations along [11 2‾ 0](1 1‾ 00) and [2 1‾ 1‾ 0](01 1‾ 0) in wurtzite lattice structure. The tension-compression asymmetry was also found in the AlN/GaN multilayer.
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影响因子：
9.4
作者：
Ruifeng Zhang;Jian Wang;I. Beyerlein;A. Misra;T. Germann
通讯作者：
Ruifeng Zhang;Jian Wang;I. Beyerlein;A. Misra;T. Germann
影响因子：
9.4
作者：
Misra, A;Hirth, JP;Hoagland, RG
通讯作者：
Hoagland, RG
影响因子：
2.1
作者：
Cheng, Dong;Yan, Zhi Jun;Yan, Li
通讯作者：
Yan, Li
影响因子：
5
作者：
Leyland, A;Matthews, A
通讯作者：
Matthews, A
影响因子：
--
作者：
Y. Dimitrienko;A. Sokolov
通讯作者：
Y. Dimitrienko;A. Sokolov