Seal Formation in Silicon Planar Patch-Clamp Microstructures
Seal Formation in Silicon Planar Patch-Clamp Microstructures
复制标题
硅平面膜片钳微结构中的密封形成
DOI：
10.1109/jmems.2008.924270
复制
发表时间：
2008
影响因子：
2.7
通讯作者：
A. Murray
中科院分区：
文献类型：
--
作者：
J. Curtis;K. Baldwin;B. Dworak;J. Stevenson;E. Delivopoulos;N. Macleod;A. Murray
本文提出了一种微加工平面膜片钳电极设计，并研究了几种物理特性对密封形成的影响。该器件由直径为 1.5-2.5 μm、深度为 7-12 μm 的贴片孔径组成，具有反面深蚀刻 80 μm 的孔。贴片孔径涂有热氧化物或等离子体增强化学气相沉积 (PECVD) SiO2。一些热氧化物器件被转换成突出的喷嘴结构，还有一些是掺硼的。用培养的 N2a 神经母细胞瘤细胞测试密封形成。 PECVD 氧化物器件产生的平均密封电阻为 34 MΩ(n = 24)，热氧化物器件产生的平均密封电阻为 96 MΩ(n = 59)。发现密封阻力与贴片孔径深度呈正相关。全细胞记录是从使用热氧化物装置测试的 14% 的细胞中获得的，其中包括获得千兆欧姆密封的单个记录。
This paper presents a microfabricated planar patch-clamp electrode design and looks at the impact of several physical characteristics on seal formation. The device consists of a patch aperture, 1.5-2.5 mum in diameter and 7-12 mum in depth, with a reverse-side deep-etched 80-mum well. The patch aperture was coated with either thermal oxide or plasma-enhanced chemical vapor deposited (PECVD) SiO2. Some of the thermal oxide devices were converted into protruding nozzle structures, and some were boron-doped. Seal formation was tested with cultured N2a neuroblastoma cells. The PECVD oxide devices produced an average seal resistance of 34 MOmega(n = 24), and the thermal oxide devices produced an average seal resistance of 96 MOmega(n = 59). Seal resistance was found to positively correlate with patch aperture depth. Whole-cell recordings were obtained from 14% of cells tested with the thermal oxide devices, including a single recording where a gigaohm seal was obtained.
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