High-k dielectric Al₂O₃ nanowire and nanoplate field effect sensors for improved pH sensing.
High-k dielectric Al₂O₃ nanowire and nanoplate field effect sensors for improved pH sensing.
复制标题
DOI：
10.1007/s10544-010-9497-z
复制
发表时间：
2011-04
影响因子：
2.8
通讯作者：
Bashir, Rashid
中科院分区：
文献类型：
--
作者：
Reddy, Bobby, Jr.;Dorvel, Brian R.;Go, Jonghyun;Nair, Pradeep R.;Elibol, Oguz H.;Credo, Grace M.;Daniels, Jonathan S.;Chow, Edmond K. C.;Su, Xing;Varma, Madoo;Alam, Muhammad A.;Bashir, Rashid
在过去的十年中，具有纳米尺寸的场效应晶体管（FET）已经成为可能的无标记生物和化学传感器，能够高度灵敏地检测各种实体和过程。虽然在提高灵敏度方面取得了重大进展，但在各种关键参数的研究中仍有许多工作要做，例如传感电介质的选择、施加的前栅和背栅偏压的选择、器件尺寸的设计等。在这项工作中，我们提出了一种工艺来制造纳米线和纳米板FET与Al2O3栅沟道，我们比较这些器件与FET与SiO2栅沟道。使用诸如Al2O3的高k电介质允许栅极电介质的物理厚度更厚而不损失对电荷的敏感性，这然后减少了泄漏电流并导致在流体中高度鲁棒的器件。这种优化的工艺使器件在流体环境中稳定长达8小时。使用pH传感作为基准，我们显示的重要性，优化器件的偏置，特别是背栅偏置调制的有效沟道厚度。我们还表明，与Al2O3栅电阻器件表现出优越的上级的pH值的敏感性相比，与SiO2栅电阻器件。最后，我们表明，当有效的电气硅沟道厚度是德拜长度的顺序，设备响应pH值几乎是独立的设备宽度。这些硅FET传感器可能成为未来基于硅的芯片实验室系统的组成部分。
Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al2O3 gate dielectrics and we compare these devices with FETs with SiO2 gate dielectrics. The use of a high-k dielectric such as Al2O3 allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al2O3 gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO2 gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems.
登录
查看更多内容
影响因子：
8.4
作者：
Bergveld, P
通讯作者：
Bergveld, P
DOI：
10.1016/0250-6874(89)80041-1
发表时间：
1989-05-17
期刊：
SENSORS AND ACTUATORS
影响因子：
--
作者：
SCHASFOORT, RBM;BERGVELD, P;GREVE, J
通讯作者：
GREVE, J
影响因子：
2.8
作者：
Dankerl, M.;Reitinger, A.;Garrido, J. A.
通讯作者：
Garrido, J. A.
影响因子：
2.4
作者：
Gnani, Elena;Reggiani, Susanna;Baccarani, Giorgio
通讯作者：
Baccarani, Giorgio
影响因子：
8.4
作者：
KRUISE, J;RISPENS, JG;REINHOUDT, DN
通讯作者：
REINHOUDT, DN