Electron effective mass and electronic structure in nonstoichiometric amorphous Indium Gallium Zinc Oxide films
Electron effective mass and electronic structure in nonstoichiometric amorphous Indium Gallium Zinc Oxide films
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非化学计量非晶氧化铟镓锌薄膜中的电子有效质量和电子结构
DOI：
10.1016/j.jallcom.2019.152183
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发表时间：
2018-11
影响因子：
6.2
通讯作者：
Li Zhi-Qing
中科院分区：
文献类型：
--
作者：
Zhu Xin;Yang Yang;Liu Xin-Dian;Li Zhi-Qing
研究了非晶态铟镓锌氧化物（a-IGZO）在缺乏镓和锌的情况下的输运性质、透过率和吸收光谱。电阻率和载流子浓度随温度的变化均表明薄膜具有简并半导体（或金属）特性。热功率为负，且随温度的降低而线性减小，表明电子扩散热功率控制着各膜内的热输运过程。利用类自由电子模型，我们提取了电子的有效质量，它大约是化学计量质量的三倍，并且随着载流子（电子）浓度的增加而增加。忽略了在价带最大值附近的波向量的能量变化，利用类自由电子模型，通过光学吸收光谱测量得到了电子的有效质量。通过光谱测量获得的有效质量的大小与通过热功率测量获得的每个薄膜的大小相当。我们的研究结果强烈地表明，非化学计量的a-IGZO薄膜具有自由电子样的伪能带结构。
The transport properties and optical transmittance and absorption spectra for the nostoichiometric amorphous indium gallium zinc oxide (a-IGZO) films with gallium and zinc deficiencies are investigated. The resistivity and carrier concentration variation with temperature both reveal that the films possess degenerate semiconductor (or metal) characteristics. The thermopower is negative and decreases linearly with decreasing temperature, indicating the electron diffusion thermopower governs the thermal transport process in each film. Using free-electron-like model, we extracted the electron effective mass, which is about three times as large as that of the stoichiometric one and increases with increasing carrier (electron) concentration. Neglecting the variation in the energy with the wavevector near the valence band maximum and using the free-electron-like model, we also obtained the electron effective mass via the optical absorption spectra measurement. The magnitude of the effective mass obtained via optical spectra measurement is comparable to that obtained via thermopower measurement for each film. Our results strongly suggest that the nostoichiometric a-IGZO films possess free-electron-like pseudo-energy-bandstructure.
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DOI：
10.1103/physrevb.40.4194
发表时间：
1989-08
期刊：
Physical review. B, Condensed matter
影响因子：
--
作者：
Moebius
通讯作者：
Moebius
影响因子：
2.1
作者：
Xiaolong Zhou;Hanxing Cao;Zhaobo Zhou;J. Cao;Jie Yu
通讯作者：
Xiaolong Zhou;Hanxing Cao;Zhaobo Zhou;J. Cao;Jie Yu
影响因子：
3.7
作者：
J. Furthmüller;P. Hahn;F. Fuchs;F. Bechstedt
通讯作者：
J. Furthmüller;P. Hahn;F. Fuchs;F. Bechstedt
电子-电子相互作用对薄和厚Ag-x(SnO2)(1-x)颗粒金属纵向和霍尔传输的影响
影响因子：
3.7
作者：
Wu, Ya-Nan;Wei, Yan-Fang;Li, Zhi-Qing;Lin, Juhn-Jong
通讯作者：
Lin, Juhn-Jong
影响因子：
4.6
作者：
de Meux, A. de Jamblinne;Pourtois, G.;Heremans, P.
通讯作者：
Heremans, P.