Atomistic understanding of scratching-induced material attrition of wurtzite single-crystal AlN using nanoscale diamond abrasive
Atomistic understanding of scratching-induced material attrition of wurtzite single-crystal AlN using nanoscale diamond abrasive
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使用纳米级金刚石磨料对纤锌矿单晶 AlN 刮擦引起的材料磨损的原子理解
DOI：
10.1016/j.triboint.2022.107483
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发表时间：
2022-02
影响因子：
6.2
通讯作者：
Xiao Chen
中科院分区：
文献类型：
--
作者：
Guo Jian;Tan Shilian;Xiao Chen
通过分子动力学模拟和摩擦磨损试验，从原子水平研究了单晶氮化铝在单颗金刚石磨料作用下的划痕诱导材料去除行为和机理。在模拟中，Al封端的AlN（0001）表面上的单层去除厚度最小。位错和层错是亚表面晶格损伤的主要形式，并与划痕深度呈正相关。模拟和实验结果表明，塑性占主导地位的氮化铝的磨损可以适当地描述与Archard型模型，在有限的负载范围内的正常负载，但不能保持在高负荷下的磨损体积线性。这项工作提供了原子级的见解AlN的机械材料磨损，并有助于超精密表面加工的基础知识。
The scratching-induced material removal behavior and mechanism of single-crystal AlN using single diamond abrasive were studied at atomic level through molecular dynamics simulation and nanowear test. A minimum removal thickness of monolayer is achieved on Al-terminated AlN(0001) surface in simulation. Dislocations and stacking fault constitute the main subsurface lattice damage and demonstrate positive correlations with the scratching depth. Both simulated and experimental results suggest that the plasticity-dominated nanowear of AlN can be properly described with the Archard-type model that relates the wear volume linearly to the normal load in a limited load range, but cannot be maintained at high load. This work provides atomic-level insights into mechanical material attrition of AlN and contributes basic knowledge to ultraprecision surface machining.
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影响因子：
4.6
作者：
Celano U;Hsia FC;Vanhaeren D;Paredis K;Nordling TEM;Buijnsters JG;Hantschel T;Vandervorst W
通讯作者：
Vandervorst W
影响因子：
6.2
作者：
Karina E. Avila;Stefan Kuchemann;I. A. Alhafez;H. Urbassek
通讯作者：
Karina E. Avila;Stefan Kuchemann;I. A. Alhafez;H. Urbassek
影响因子：
4.1
作者：
Fan，Pengfei;Goel，Saurav;Wang，Yuzhang
通讯作者：
Wang，Yuzhang
纳米压痕下AlN薄膜的分子动力学模拟
影响因子：
5.2
作者：
Xiang Henggao;Li Haitao;Fu Tao;Zhao Yinbo;Huang Cheng;Zhang Gang;Peng Xianghe;Li Haitao;Peng Xianghe;Li HT;Peng XH
通讯作者：
Peng XH
影响因子：
3.4
作者：
K. Zhao;R. Aghababaei
通讯作者：
K. Zhao;R. Aghababaei