Dislocation-mediated relaxation in nanograined columnar palladium films revealed by on-chip time-resolved HRTEM testing.
Dislocation-mediated relaxation in nanograined columnar palladium films revealed by on-chip time-resolved HRTEM testing.
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DOI:
10.1038/ncomms6922
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发表时间:
2015-01-05
影响因子:
16.6
通讯作者:
Pardoen, T.
中科院分区:
文献类型:
--
作者:
Colla, M. -S.;Amin-Ahmadi, B.;Idrissi, H.;Malet, L.;Godet, S.;Raskin, J. -P.;Schryvers, D.;Pardoen, T.
The high-rate sensitivity of nanostructured metallic materials demonstrated in the recent literature is related to the predominance of thermally activated deformation mechanisms favoured by a large density of internal interfaces. Here we report time-resolved high-resolution electron transmission microscopy creep tests on thin nanograined films using on-chip nanomechanical testing. Tests are performed on palladium, which exhibited unexpectedly large creep rates at room temperature. Despite the small 30-nm grain size, relaxation is found to be mediated by dislocation mechanisms. The dislocations interact with the growth nanotwins present in the grains, leading to a loss of coherency of twin boundaries. The density of stored dislocations first increases with applied deformation, and then decreases with time to drive additional deformation while no grain boundary mechanism is observed. This fast relaxation constitutes a key issue in the development of various micro- and nanotechnologies such as palladium membranes for hydrogen applications. Nanostructured metallic materials involve a high rate sensitivity usually resulting from grain boundary related mechanisms. Here, the authors report mechanical tests on freestanding Pd thin films and show that creep is associated with dislocations rather than grain boundaries.
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DOI:
10.1007/bf02666659
发表时间:
1989-11-01
期刊:
METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
影响因子:
--
作者:
NIX, WD
通讯作者:
NIX, WD
影响因子:
4.6
作者:
Lee, Joon Hwan;Holland, Troy B.;Mukherjee, Amiya K.;Zhang, Xinghang;Wang, Haiyan
通讯作者:
Wang, Haiyan
影响因子:
9.8
作者:
Wang, B.;Idrissi, H.;Schryvers, D.
通讯作者:
Schryvers, D.
影响因子:
9.4
作者:
Lu, L;Schwaiger, R;Suresh, S
通讯作者:
Suresh, S
影响因子:
29.4
作者:
Idrissi, Hosni;Wang, Binjie;Pardoen, Thomas
通讯作者:
Pardoen, Thomas