The influence of crystallization route on the Ce-doped Bi2Ti2O7 thin film by metal organic decomposition
The influence of crystallization route on the Ce-doped Bi2Ti2O7 thin film by metal organic decomposition
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金属有机分解结晶路线对Ce掺杂Bi2Ti2O7薄膜的影响
DOI：
10.1016/j.jallcom.2010.01.010
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发表时间：
2010-04
影响因子：
6.2
通讯作者：
X.M. Chen
中科院分区：
文献类型：
--
作者：
J.C. Wang;C.H. Yang;G.D. Hu;W.B. Wu;L. Cheng;X.M. Chen
采用金属有机分解法在p型Si(100)衬底上直接生长了150 nm厚的Ce：Bi2Ti2O7(Ce：BTO)薄膜。研究了不同晶化途径对薄膜结构和电学性能的影响。X射线衍射图表明，在550℃下连续层退火(SLA)可以得到相纯的Ce：BTO薄膜，而采用常规退火(CA)的薄膜即使在650℃时也没有其他相。550℃SLA和650℃CA制备的Ce：BTO薄膜由于具有良好的绝缘性能来抵抗电荷注入而没有明显的电容-电压滞后。它们的等效氧化层厚度分别约为4.05 nm和4.35 nm。在100 kHz频率下，两种薄膜均表现出较高的相对介电常数(144.6,134.5)和较低的损耗因子(0.10，0.08)。
The 150-nm-thick Ce:Bi2Ti2O7(Ce:BTO) thin films have been grown directly on p-type Si (100) substrate by a metal organic decomposition method. The effect of different crystallization routes on the structure and electrical properties of the films has been investigated. X-ray diffraction patterns show that phase-pure pyrochlore Ce:BTO films can be obtained by sequential layer annealing (SLA) at 550°C. However, the films annealed using conventional annealing (CA) have no other phase even when the temperature is as higher as 650°C. The Ce:BTO films prepared by SLA at 550°C and CA at 650°C have negligible capacitance–voltage hysteresis loops due to the good insulating properties to resist the charge injections. Their equivalent oxide thicknesses are about 4.05nm and 4.35nm, respectively. Both films also show high relative dielectric constants (144.6, 134.5) and low dissipation factors (0.10, 0.08) at the frequency of 100kHz.
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影响因子：
4.6
作者：
Ch.H. Yang;Z. Wang;Hongyan Xu;Xun Sun;Jianru Han
通讯作者：
Ch.H. Yang;Z. Wang;Hongyan Xu;Xun Sun;Jianru Han
影响因子：
3.2
作者：
G. Yuan;S. Or;H. Chan;Zu-liang Liu
通讯作者：
G. Yuan;S. Or;H. Chan;Zu-liang Liu
影响因子：
1.5
作者：
Wenbiao Wu;K. Fumoto;Y. Oishi;M. Okuyama;Y. Hamakawa
通讯作者：
Wenbiao Wu;K. Fumoto;Y. Oishi;M. Okuyama;Y. Hamakawa
影响因子：
4
作者：
M. Visokay;J. J. Chambers-J.;A. Rotondaro;A. Shanware;L. Colombo
通讯作者：
M. Visokay;J. J. Chambers-J.;A. Rotondaro;A. Shanware;L. Colombo
影响因子：
1.8
作者：
Shaowei Wang;Hong Wang;Xianming Wu;S. Shang;M. Wang;Zhifeng Li;W. Lu
通讯作者：
Shaowei Wang;Hong Wang;Xianming Wu;S. Shang;M. Wang;Zhifeng Li;W. Lu