Monolithically multi-color lasing from an InGaN microdisk on a Si substrate.
Monolithically multi-color lasing from an InGaN microdisk on a Si substrate.
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从SI底物上的Ingan微电台进行单层多色激光。
DOI：
10.1038/s41598-017-10712-4
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发表时间：
2017-08-30
影响因子：
4.6
通讯作者：
Wang T
中科院分区：
文献类型：
--
作者：
Athanasiou M;Smith RM;Pugh J;Gong Y;Cryan MJ;Wang T
利用硅衬底上的InGaN/GaN基微盘实现了光泵浦多色激光器。微盘激光器是通过低成本的微球光刻技术和随后的干/湿法刻蚀工艺相结合的方式制造出来的。微盘激光器的直径约为1 μm。该结构被设计成可以有效地抑制所形成的耳廊(WG)模式的垂直分量。因此，利用连续波半导体激光器作为光抽运光源，在室温下获得了442 nm、493 nm和522 nm三个干净的激光峰值。为了通过研究这些激子峰的激子复合动力学，进行了时间分辨的显微光致发光(PL)测量，以进一步证实激光的存在。采用三维时域有限差分(FDTD)方法进行了结构设计。
An optically pumped multi-color laser has been achieved using an InGaN/GaN based micro-disk with an undercut structure on a silicon substrate. The micro-disk laser has been fabricated by means of a combination of a cost-effective microsphere lithography technique and subsequent dry/wet etching processes. The microdisk laser is approximately 1 μm in diameter. The structure was designed in such a way that the vertical components of the whispering gallery (WG) modes formed can be effectively suppressed. Consequently, three clean lasing peaks at 442 nm, 493 nm and 522 nm have been achieved at room temperature by simply using a continuous-wave diode laser as an optical pumping source. Time–resolved micro photoluminescence (PL) measurements have been performed in order to further confirm the lasing by investigating the excitonic recombination dynamics of these lasing peaks. A three dimensional finite-difference-time-domain (FDTD) simulation has been used for the structure design.
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