Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene.

Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene.
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将高索引Cu放在地图上,以进行高收益,干燥的CVD石墨烯。

DOI:
10.1021/acsnano.2c09253
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发表时间:
2023-01-03
期刊:
影响因子:
17.1
通讯作者:
Hofmann, Stephan
Hofmann, Stephan
中科院分区:
材料科学1区
文献类型:
--
作者:
Burton, Oliver J.;Winter, Zachary;Watanabe, Kenji;Taniguchi, Takashi;Beschoten, Bernd;Stampfer, Christoph;Hofmann, Stephan

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2D材料层的可靠、清洁转移和界面连接在技术上与它们的生长一样重要。由于参数空间巨大且相互关联,因此将两者结合在一起仍然是一个挑战。我们引入了一种快速筛选描述符方法来展示石墨烯-Cu模型系统的整个过程步骤中的整体数据驱动优化。我们映射的石墨烯化学气相沉积,界面铜氧化去耦石墨烯的结晶学依赖性,以及其干脱层跨越反极图。它们的叠加使我们能够将迄今为止尚未探索的(168)较高指数Cu取向确定为总体最佳取向。我们显示了通过外延近空间升华的这种Cu取向的有效制备,并以非常高的产率(>95%)和石墨烯域的质量实现机械转移,室温电子迁移率在40000 cm 2/(V s)的范围内。我们的方法很容易适应其他描述符和2D材料系统,并且我们讨论了这种整体优化的机会。
Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a fast-screening descriptor approach to demonstrate holistic data-driven optimization across the entirety of process steps for the graphene–Cu model system. We map the crystallographic dependences of graphene chemical vapor deposition, interfacial Cu oxidation to decouple graphene, and its dry delamination across inverse pole figures. Their overlay enables us to identify hitherto unexplored (168) higher index Cu orientations as overall optimal orientations. We show the effective preparation of such Cu orientations via epitaxial close-space sublimation and achieve mechanical transfer with a very high yield (>95%) and quality of graphene domains, with room-temperature electron mobilities in the range of 40000 cm2/(V s). Our approach is readily adaptable to other descriptors and 2D material systems, and we discuss the opportunities of such a holistic optimization.
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