Resolution properties of reflection-mode exponential-doping GaAs photocathodes

Resolution properties of reflection-mode exponential-doping GaAs photocathodes
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反射模式指数掺杂砷化镓光电阴极的分辨率特性

DOI:
10.1016/j.mssp.2014.03.006
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发表时间:
2014-08
影响因子:
4.1
通讯作者:
Honggang Wang 等
Honggang Wang 等
中科院分区:
工程技术3区
文献类型:
--
作者:
Honggang Wang 等

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利用建立并求解二维连续性方程得到的调制传递函数,计算并比较分析了反射模指数掺杂和均匀掺杂GaAs光电阴极的分辨率特性。计算结果表明,与均匀掺杂的GaAs光电阴极相比,指数掺杂结构不仅可以显著提高光电阴极的分辨率,而且可以提高光电阴极的量子效率。这种改进不同于通过减小发射层厚度T e和电子扩散长度L D或通过增加后界面的复合速度S V来实现高分辨率的方法,后者会导致低量子效率。此外,反射模式指数掺杂GaAs光电阴极的分辨率和量子效率的提高是由于内置电场对电子输运和横向扩散的影响。
Resolution properties of reflection-mode exponential-doping and uniform-doping GaAs photocathodes were calculated and comparatively analyzed by using the modulation transfer function obtained by establishing and solving the two-dimensional continuity equation. The calculated results show that compared with the uniform-doping GaAs photocathode, the exponential-doping structure can improve significantly not only the resolution, but also the quantum efficiency of the photocathode. This improvement differs from the approach for achieving high resolution by reducing the emitting layer thickness T e and the electron diffusion length L D or by increasing the recombination velocity of back-interface S V, which results in low quantum efficiency. Furthermore, the improvement of resolution and quantum efficiency of the reflection-mode exponential-doping GaAs photocathode is due the effect of the built-in electric field on electron transport and on lateral diffusion.
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发表时间: 1972-10
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