Resolution properties of reflection-mode exponential-doping GaAs photocathodes
Resolution properties of reflection-mode exponential-doping GaAs photocathodes
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反射模式指数掺杂砷化镓光电阴极的分辨率特性
DOI:
10.1016/j.mssp.2014.03.006
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发表时间:
2014-08
影响因子:
4.1
通讯作者:
Honggang Wang 等
中科院分区:
文献类型:
--
作者:
Honggang Wang 等
Resolution properties of reflection-mode exponential-doping and uniform-doping GaAs photocathodes were calculated and comparatively analyzed by using the modulation transfer function obtained by establishing and solving the two-dimensional continuity equation. The calculated results show that compared with the uniform-doping GaAs photocathode, the exponential-doping structure can improve significantly not only the resolution, but also the quantum efficiency of the photocathode. This improvement differs from the approach for achieving high resolution by reducing the emitting layer thickness T e and the electron diffusion length L D or by increasing the recombination velocity of back-interface S V, which results in low quantum efficiency. Furthermore, the improvement of resolution and quantum efficiency of the reflection-mode exponential-doping GaAs photocathode is due the effect of the built-in electric field on electron transport and on lateral diffusion.
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DOI:
10.1088/0022-3727/5/10/101
发表时间:
1972-10
期刊:
Journal of Physics D
影响因子:
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