Influence factors of film adhesion criterion of the nondestructive CZM-SAW technique
Influence factors of film adhesion criterion of the nondestructive CZM-SAW technique
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无损CZM-SAW技术膜层附着力标准的影响因素
DOI：
10.7567/1347-4065/ab1b63
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发表时间：
2019-07
影响因子：
1.5
通讯作者：
Kong Tao
中科院分区：
文献类型：
--
作者：
Qi Haiyang;Xiao Xia;Kong Tao
表面声波（SAW）技术与内聚区模型（CZM）相结合，可以无损、定量地确定薄膜粘附力。此外，CZM-SAW技术还可以通过粘接判据定量地判断粘接质量。在这项研究中，四种不同的薄膜材料的粘附准则，从50 nm到6000 nm的较宽的厚度范围内进行了模拟，以研究的影响因素的薄膜粘附准则确定的CZM声表面波技术。研究薄膜附着力指标的影响因素对判断薄膜附着力质量至关重要。此外，还分析了测量误差引起的粘着准则偏差。采用CZM-SAW技术对六种薄膜样品的附着性能进行了测试，并在考虑测量误差的情况下，采用附着准则对薄膜的附着性能进行了判断。本文展示了CZM-SAW技术的独特优势，它是表征薄膜附着力的完整方法。
Film adhesion can be determined by the surface acoustic wave (SAW) technique combined with the cohesive zone model (CZM) nondestructively and quantitatively. Moreover, the CZM-SAW technique can judge the adhesion quality quantitatively by the adhesion criterion. In this study, adhesion criterions of four kinds of different film materials with a wide thickness range from 50 nm to 6000 nm are simulated to study the influence factors of film adhesion criterion determined by the CZM-SAW technique. Studying influence factors of film adhesion criterion is essential for adhesion quality judgment. In addition, the adhesion criterion deviation caused by measurement error is analyzed. Adhesion properties of six film samples are determined by the CZM-SAW technique and are judged by the adhesion criterion with considering measurement errors. This paper exhibits the unique advantage of the CZM-SAW technique, which is a complete method for characterizing the film adhesion.
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影响因子：
3.7
作者：
Ferrari, AC;Li Bassi, A;Robertson, J
通讯作者：
Robertson, J
影响因子：
6.7
作者：
Yoo Jai Won;H. Ki
通讯作者：
Yoo Jai Won;H. Ki
影响因子：
5.4
作者：
D. Schneider;Rainer Hofmann;T. Schwarz;T. Grosser;E. Hensel
通讯作者：
D. Schneider;Rainer Hofmann;T. Schwarz;T. Grosser;E. Hensel
影响因子：
4
作者：
C. Flannery;T. Wittkowski;K. Jung;B. Hillebrands;M. Baklanov
通讯作者：
C. Flannery;T. Wittkowski;K. Jung;B. Hillebrands;M. Baklanov
影响因子：
3.9
作者：
G. Chow;E. Uchaker;G. Cao;Junlan Wang
通讯作者：
G. Chow;E. Uchaker;G. Cao;Junlan Wang