Carrier-tunable magnetism of graphene with single-atom vacancy
Carrier-tunable magnetism of graphene with single-atom vacancy
复制标题
单原子空位石墨烯的载流子可调磁性
DOI：
10.1063/1.4809562
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发表时间：
2013-06
影响因子：
3.2
通讯作者：
Yang, Jinlong
中科院分区：
文献类型：
--
作者：
Lei, Shulai;Li, Bin;Kan, Erjun;Huang, Jing;Li, Qunxiang;Yang, Jinlong
We explore the carrier doping effect on magnetic properties of defective graphene with single-atom vacancy by performing spin-polarized density functional theory calculations. Theoretical results show that both hole and electron dopings can effectively modify the local magnetic moments. Besides, we also demonstrate that hole doping can greatly enhance the magnetic coupling, increasing the critical temperature of magnetism, which is absent in electron doping case. The coupling enhanced mechanism can be well understood by the different variation trends of pz-derived states around the Fermi level under hole doping. Thus, our results provide a practical way to tune the magnetism of defective graphene.
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影响因子：
3.7
作者：
M. Vozmediano;M. P. López-Sancho;T. Stauber;F. Guinea;F. Guinea
通讯作者：
M. Vozmediano;M. P. López-Sancho;T. Stauber;F. Guinea;F. Guinea
DOI：
10.1002/pssa.2210470102
发表时间：
1978-05
期刊：
Physica Status Solidi (a)
影响因子：
--
作者：
P. Thrower;R. M. Mayer
通讯作者：
P. Thrower;R. M. Mayer
影响因子：
9
作者：
Hockaday LA;Kang KH;Colangelo NW;Cheung PY;Duan B;Malone E;Wu J;Girardi LN;Bonassar LJ;Lipson H;Chu CC;Butcher JT
通讯作者：
Butcher JT
影响因子：
3.7
作者：
Kresse, G;Furthmuller, J
通讯作者：
Furthmuller, J
影响因子：
3.7
作者：
E. Santos;S. Riikonen;D. Sánchez-Portal;D. Sánchez-Portal;A. Ayuela;A. Ayuela
通讯作者：
E. Santos;S. Riikonen;D. Sánchez-Portal;D. Sánchez-Portal;A. Ayuela;A. Ayuela