Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells.
Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells.
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六种不同的薄膜太阳能电池组成的正交（α-SnS）或立方（π-SnS）锡（ii）硫化物吸收层已被制作，表征和评估。通过温度控制的气溶胶辅助化学气相沉积（AA-CVD）从单一源前体选择性地沉积π-SnS或α-SnS的吸收层。在钼（Mo）、氟掺杂氧化锡（FTO）和涂覆有薄的非晶-TiOx层（am-TiOx-FTO）的FTO上生长α-SnS和π-SnS层，这被示出对沉积的薄膜的生长速率和形貌具有显著影响。采用X射线衍射（XRD）和拉曼光谱（514.5 nm）对纯相α-SnS和π-SnS薄膜进行了表征。此外，随后使用CdS缓冲层、本征ZnO（i-ZnO）作为绝缘体和氧化铟锡（ITO）作为顶部接触来制造具有0.1cm 2的有效面积的一系列PV器件。由α-SnS多晶型物组成的器件的最高太阳能转换效率是用Mo（η = 0.82%）或FTO（η = 0.88%）作为背接触实现的，其开路电压（Voc）分别为0.135和0.144 V，短路电流密度（Jsc）分别为12.96和12.78 mA cm-2。对于含有π-SnS多晶型物的器件，使用am-TiOx-FTO（η = 0.41%）背接触获得最高效率，Voc为0.135 V，Jsc为5.40 mA cm-2。我们表明，温和的制造后热板退火可以提高Jsc，但在大多数情况下可以妥协的Voc。通过太阳能转换效率和外量子效率（EQE）测量来监测顺序退火的效果。α-和π-SnS的多晶型选择性沉积使得它们能够在各种器件结构中作为薄膜PV吸收层进行评估。
Six different thin film solar cells consisting of either orthorhombic (α-SnS) or cubic (π-SnS) tin(ii) sulfide absorber layers have been fabricated, characterized and evaluated. Absorber layers of either π-SnS or α-SnS were selectively deposited by temperature controlled Aerosol Assisted Chemical Vapor Deposition (AA-CVD) from a single source precursor. α-SnS and π-SnS layers were grown on molybdenum (Mo), Fluorine-doped Tin Oxide (FTO), and FTO coated with a thin amorphous-TiOx layer (am-TiOx-FTO), which were shown to have significant impact on the growth rate and morphology of the as deposited thin films. Phase pure α-SnS and π-SnS thin films were characterized by X-ray diffraction analysis (XRD) and Raman spectroscopy (514.5 nm). Furthermore, a series of PV devices with an active area of 0.1 cm2 were subsequently fabricated using a CdS buffer layer, intrinsic ZnO (i-ZnO) as an insulator and Indium Tin Oxide (ITO) as a top contact. The highest solar conversion efficiency for the devices consisting of the α-SnS polymorph was achieved with Mo (η = 0.82%) or FTO (η = 0.88%) as the back contacts, with respective open-circuit voltages (Voc) of 0.135 and 0.144 V, and short-circuit current densities (Jsc) of 12.96 and 12.78 mA cm−2. For the devices containing the π-SnS polymorph, the highest efficiencies were obtained with the am-TiOx-FTO (η = 0.41%) back contact, with a Voc of 0.135 V, and Jsc of 5.40 mA cm−2. We show that mild post-fabrication hot plate annealing can improve the Jsc, but can in most cases compromise the Voc. The effect of sequential annealing was monitored by solar conversion efficiency and external quantum efficiency (EQE) measurements. Polymorph selective deposition of α- and π-SnS enables their evaluation as thin film PV absorber layers in various device structures.
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