A unipolar nano-diode detector with improved performance using the high-k material SiNx
A unipolar nano-diode detector with improved performance using the high-k material SiNx
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使用高 k 材料 SiNx 改进性能的单极纳米二极管探测器
DOI：
10.1088/1361-6641/aae2f5
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发表时间：
2018-10
影响因子：
1.9
通讯作者：
Song Aimin
中科院分区：
文献类型：
--
作者：
Zhang Linqing;Zhou Haiping;Zhang Jiawei;Wang Qingpu;Zhang Yifei;Song Aimin
通过在绝缘纳米沟槽中沉积100 nm厚的高介电常数（high-k） SiNx薄膜，提高了自开关二极管（SSD）的性能。采用等离子体增强化学气相沉积法生长的SiNx薄膜可以增强沟槽上的电场耦合，从而增加场效应的累积电荷。在这种情况下，电流-电压非线性得到了显著改善，高频整流的响应性也提高了近一个数量级，达到100 GHz。此外，与未涂覆SiNx的器件相比，该二极管的低频噪声得到了显著抑制。在50 GHz和180 pW Hz - 1/2下，采用SiNx涂层的11块SSD硬盘的响应度和噪声等效功率分别为110 V W−1和180 pW Hz−1/2，与目前报道的SSD阵列的最新数据相当。
The performance of a solid-state planar nano-diode, namely self-switching diode (SSD), is improved by depositing a 100 nm-thick SiNx film with high dielectric constant (high-k) into the insulating nano-trenches. The SiNx film grown by using plasma-enhanced chemical vapour deposition can enhance the electric field coupling over the trenches and thus increase the accumulated charges for field effect. In this case, the current–voltage nonlinearity is improved significantly and the responsivity of high-frequency rectification is also increased by a factor of almost one order up to 100 GHz. In addition, compared to the device without SiNx coating, the low frequency noise of the proposed diode is suppressed dramatically. The improved responsivity and noise-equivalent power of 11 SSDs in parallel with SiNx coating are 110 V W−1 at 50 GHz and 180 pW Hz−1/2, which are comparable to the state-of-the-art data of reported SSD arrays.
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影响因子：
1.6
作者：
P. Manfredi;V. Speziali;F. Svelto
通讯作者：
P. Manfredi;V. Speziali;F. Svelto
DOI：
10.1088/0953-8984/20/38/384203
发表时间：
2008-08
期刊：
Journal of Physics: Condensed Matter
影响因子：
--
作者：
Claudio Balocco;M. Halsall;Nguyen Q. Vinh;Aimin Song
通讯作者：
Claudio Balocco;M. Halsall;Nguyen Q. Vinh;Aimin Song
影响因子：
4
作者：
N. Lukyanchikova;N. Garbar;V. Kudina;A. Smolanka;S. Put;C. Claeys;E. Simoen
通讯作者：
N. Lukyanchikova;N. Garbar;V. Kudina;A. Smolanka;S. Put;C. Claeys;E. Simoen
DOI：
10.1063/1.2349591
发表时间：
2006-09
期刊：
2007 IEEE Instrumentation & Measurement Technology Conference IMTC 2007
影响因子：
--
作者：
G. Giusi;F. Crupi;C. Ciofi;C. Pace
通讯作者：
G. Giusi;F. Crupi;C. Ciofi;C. Pace
影响因子：
1.7
作者：
T. Kauerauf;B. Govoreanu;R. Degraeve;G. Groeseneken;H. Maes
通讯作者：
T. Kauerauf;B. Govoreanu;R. Degraeve;G. Groeseneken;H. Maes