Nonequilibrium Plasma Aerotaxy of InN Nanocrystals and Their Photonic Properties
Nonequilibrium Plasma Aerotaxy of InN Nanocrystals and Their Photonic Properties
复制标题
InN纳米晶的非平衡等离子体航向及其光子性质
DOI：
10.1021/acs.jpcc.9b09555
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Thimsen, Elijah
中科院分区：
文献类型：
--
作者：
Uner, Necip B.;Niedzwiedzki, Dariusz M.;Thimsen, Elijah
最近推出的一种用于合成 III-V 族半导体纳米晶体 (NC) 的气相方法，称为非平衡等离子体气射法，已扩展到氮化铟的合成。 InN NC 被制成独立式、化学计量的、六方相结晶。 NC 是简并的，它们在中红外区域表现出局域表面等离子体共振，其可调范围为 0.22 至 0.34 eV（3650-5600 nm）。根据德鲁德-洛伦兹理论估计，自由电子密度跨度为 (1.6–6.0) × 1020cm–3。据计算，由 Burstein-Moss 效应引起的吸收边偏移在 1.34 至 2.04 eV（∼600-925 nm）之间。瞬态吸收（TA）测量在可见光和近红外范围内进行，时间尺度从皮秒到微秒，验证了NC的高度简并性。测量结果表明，在这些纳米粒子中，兴奋的载流子弛豫和重组速度极快。复合时间约为 2 ps，与 InN 纳米线和硅掺杂 InN 薄膜上测量的值相似。纳秒和微秒范围内的 TA 信号归因于温度瞬变。
A recently introduced gas-phase method for the synthesis of III–V semiconductor nanocrystals (NCs), termed nonequilibrium plasma aerotaxy, is extended to the synthesis of indium nitride. The InN NCs were made to be free-standing, stoichiometric, and crystalline in the hexagonal phase. NCs were degenerate, and they displayed localized surface plasmon resonance in the mid-infrared, which was tunable between 0.22 and 0.34 eV (3650–5600 nm). Free electron densities span across (1.6–6.0) × 1020cm–3, as estimated from the Drude–Lorentz theory. Absorption edges shifted by the Burstein–Moss effect were calculated to be between 1.34 and 2.04 eV (∼600–925 nm). Transient absorption (TA) measurements, which were conducted in visible and near-infrared range across a time scale spanning from picoseconds to microseconds, verified the high degeneracy of the NCs. Measurements showed that in these NCs excited carriers relax and recombine extremely fast. The recombination time was found to be ∼2 ps, which is similar to the values measured on InN nanowires and silicon-doped InN thin films. TA signals present in the nanosecond and microsecond ranges were attributed to temperature transients.
登录
查看更多内容
稀有气体中电容性射频放电的电子温度和等离子体密度
DOI：
--
发表时间：
1992
期刊：
影响因子：
--
作者：
K. Wüst
通讯作者：
K. Wüst
在二氧化硅约束下采用溶液相和气相相结合的方法制备大尺寸立方 InN 纳米晶体
影响因子：
15
作者：
Chen, Zhuo;Li, Yanan;Xu, Xingyan
通讯作者：
Xu, Xingyan
DOI：
--
发表时间：
2003
期刊：
影响因子：
--
作者：
K. Butcher;M. Wintrebert;P. Chen;H. Timmers;S. Shrestha
通讯作者：
S. Shrestha
尺寸控制的 GaN 纳米晶的非平衡等离子体气走
DOI：
10.1088/1361-6463/ab59e6
发表时间：
2020
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
Uner, Necip B;Thimsen, Elijah
通讯作者：
Thimsen, Elijah
低温等离子体作为改变纳米粒子原子结构的手段
影响因子：
3.8
作者：
Uner, N B;Thimsen, E
通讯作者：
Thimsen, E