Reversible engineering of topological insulator surface state conductivity through optical excitation
Reversible engineering of topological insulator surface state conductivity through optical excitation
复制标题
通过光激发拓扑绝缘体表面态电导率的可逆工程
DOI:
10.1088/1361-6528/abde01
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发表时间:
2020-09
期刊:
影响因子:
3.5
通讯作者:
Shi S.-F.
中科院分区:
文献类型:
--
作者:
Xie F.;Lian Z.;Zhang S.;Wang T.;Miao S.;Song Z.;Ying Z.;Pan X.-C.;Long M.;Zhang M.;Fei F.;Hu W.;Yu G.;Song F.;Kang T.-T.;Shi S.-F.
Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator (TI) is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic TI Sn–Bi1.1Sb0.9Te2S (Sn-BSTS). The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-doping mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodoping modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics.
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