Effects of Double Substitution with Ge and Te on Thermoelectric Properties of a Skutterudite Compound
Effects of Double Substitution with Ge and Te on Thermoelectric Properties of a Skutterudite Compound
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Ge、Te双重取代对方钴矿化合物热电性能的影响
DOI：
10.1007/s11664-010-1457-0
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发表时间：
2011-05
影响因子：
2.1
通讯作者：
Zhang, Qingjie
中科院分区：
文献类型：
--
作者：
Duan, Bo;Zhai, Pengcheng;Liu, Lisheng;Zhang, Qingjie
研究表明，用IVB族或VIB族元素替代Sb可以改善CoSb 3的热电性能，但替代量有限。为了从热电性能的角度更好地描述置换体积，采用传统固相反应法和放电等离子烧结法制备了名义成分为Co 4SbxGe 5. 9 - 0. 5xTe 6. 1 - 0. 5x（x= 11，10，9，8）的Ge和Te双置换方钴矿材料，并采用Rietveld分析对晶体结构进行了细化。结果表明，Ge和Te共掺杂使晶格常数线性减小，IVB族和VIB族元素的溶解度限制得到了很大的缓解。此外，还通过电导率、热导率和室温电输运特性的测量分析了其热电性能。结果表明，Ge和Te的替代体积对热电性能起着重要作用，Co4Sb8Ge1.9Te2.1在673 K附近获得了最小的晶格热导率值1.56 W m− 1 K − 1。Co4Sb11Ge0.4Te0.6在773 K附近获得了最佳的优值0.89，这比未处理的CoSb 3有显著的提高。
Studies have shown that the thermoelectric properties of CoSb3could be improved by the substitution of group IVB or VIB elements for Sb. However, the substitution volume is limited. To get a better picture of the substitution volume in view of thermoelectric properties, Ge and Te double-substituted skutterudite materials were prepared with the nominal composition of Co4SbxGe5.9−0.5xTe6.1−0.5x(x= 11, 10, 9, 8) by the traditional solid-state reaction method and spark plasma sintering, and Rietveld analysis was employed to refine the crystal structure. The results showed that the lattice parameter decreased linearly and the solubility limitations of group IVB and VIB elements were greatly alleviated by the Ge and Te codoping. Besides, the thermoelectric properties were analyzed through measurements of electrical and thermal conductivities as well as room-temperature electrical transport properties. The results showed that the substitution volume of Ge and Te could play an important role in the thermoelectric properties, and a minimum lattice thermal conductivity value of 1.56 W m−1K−1was obtained at around 673 K for Co4Sb8Ge1.9Te2.1. Co4Sb11Ge0.4Te0.6achieved the best figure of merit of 0.89 at around 773 K, which was remarkably improved over that of untreated CoSb3.
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影响因子：
6.2
作者：
Jiangying Peng;Junyou Yang;Xinli Song;Yuehua Chen;Tong-jun Zhang
通讯作者：
Jiangying Peng;Junyou Yang;Xinli Song;Yuehua Chen;Tong-jun Zhang
影响因子：
3.2
作者：
G. Slack;M. A. Hussain
通讯作者：
G. Slack;M. A. Hussain
影响因子：
6.2
作者：
X. Zhang;Q. Lu;Jie Zhang;Q. Wei;Danmin Liu;Yaming Liu
通讯作者：
X. Zhang;Q. Lu;Jie Zhang;Q. Wei;Danmin Liu;Yaming Liu
影响因子：
4
作者：
Kitagawa, H;Wakatsuki, M;Noda, Y
通讯作者：
Noda, Y
影响因子：
3.2
作者：
Wenyu Zhao;C. Dong;P. Wei;W. Guan;Lisheng Liu;P. Zhai;X. Tang;Qiang Zhang
通讯作者：
Wenyu Zhao;C. Dong;P. Wei;W. Guan;Lisheng Liu;P. Zhai;X. Tang;Qiang Zhang