Humidity sensor based on Ga2O3 nanorods doped with Na+ and K+ from GaN powder
Humidity sensor based on Ga2O3 nanorods doped with Na+ and K+ from GaN powder
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基于 GaN 粉末中掺杂 Na 和 K 的 Ga2O3 纳米棒的湿度传感器
DOI：
10.1016/j.ceramint.2015.07.211
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发表时间：
2015-12
影响因子：
5.2
通讯作者：
Nan Jiang
中科院分区：
文献类型：
--
作者：
Pengpeng Wang;Xuejun Zheng;Yong Zhang;Nan Jiang
以商用氮化镓（GaN）粉末为原料，采用简单的热退火法一步合成了氧化镓（Ga 2 O3）纳米棒，并利用X射线衍射（XRD）、场发射扫描电镜（FE-SEM）、透射电镜（TEM）和X射线能谱（EDS）对产物进行了表征。采用旋涂法在涂有Ag-Pd叉指电极的Al 2 O3陶瓷基片上制备了厚膜湿敏元件，并对其湿敏特性进行了研究。所制备的Ga 2 O3纳米棒的直径为40-100 nm，长度为1-6 μm，并成功地掺杂了Na+和K+。当相对湿度（RH）在11%~ 95%范围内变化时，Ga 2 O3纳米棒传感器的阻抗随湿度的变化呈现出良好的线性响应，在4个数量级左右。响应时间和恢复时间分别为6 s和21 s，在100 Hz时最大滞后仅为3%RH。Ga 2 O3纳米棒和离子掺杂的协同效应可能是其良好的感湿性能的原因。
Gallium oxide (Ga2O3) nanorods were prepared from commercial gallium nitride (GaN) powder via the simple thermal annealing method by one step, and they were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS). The thick film humidity sensors were prepared by spin-coating the sensing materials on Al2O3ceramic substrates coated with Ag–Pd interdigitated electrodes and the humidity sensing properties were studied in detail. The as-prepared Ga2O3nanorods are of diameters 40–100 nm and lengths 1–6 μm, and they are doped with Na+and K+, successfully. The impedance variation of Ga2O3nanorods sensor with the humility exhibits good linearity response about four orders of magnitude, when the relative humility (RH) is changed from 11% to 95% at 100 Hz. Response and recovery times are about 6 s and 21 s and the maximum hysteresis is only 3% RH at 100 Hz. The good humility sensing properties may be attributed to the synergistic effect of Ga2O3nanorods and the ions doping.
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影响因子：
5.2
作者：
Ling Wang;J. Dai;Xizhong Liu;Zhibin Zhu;Xiang Huang;Pingwei Wu
通讯作者：
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影响因子：
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作者：
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影响因子：
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作者：
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通讯作者：
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DOI：
10.1007/s00339-004-2982-6
发表时间：
2005-09
期刊：
Applied Physics A
影响因子：
--
作者：
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通讯作者：
H. W. Kim;N. Kim
影响因子：
3
作者：
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