Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells
Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells
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In0 3Ga0 7As/GaAs 量子阱太阳能电池中光捕获的角度依赖性
DOI：
10.1063/1.4862931
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发表时间：
2014
影响因子：
3.2
通讯作者：
E. T. Yu
中科院分区：
文献类型：
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作者：
X. H. Li;P. C. Li;D. Z. Hu;D. M. Schaadt;E. T. Yu
对In{sub 0.3}Ga{sub 0.7}As/GaAs量子阱太阳电池的光阱效应与波长和入射角的关系进行了实验表征和分析。有源器件层与其外延生长衬底的分离使得薄膜半导体器件层能够与纳米结构化金属/电介质后接触件集成，以经由耦合到半导体中的法布里-珀罗谐振和引导的横向传播模式来增加光吸收。通过光电流响应测量和数值模拟，分析了法布里-珀罗共振和耦合到导模的作用，光入射角为0°（垂直入射）至30°偏离法线。光捕获使得在长波长处的外部量子效率能够在实验上达到高达2.9%的每量子阱，基本上超过通常观察到的每量子阱10.1%的水平。增加的长波长量子效率在实验测量中示出为随着入射角的增加而持续，并且被解释为器件结构中可用的大量导模的结果。
The dependence of light trapping effects in In{sub 0.3}Ga{sub 0.7}As/GaAs quantum-well solar cells on wavelength and incident angle is experimentally characterized and analyzed. Separation of active device layers from their epitaxial growth substrate enables integration of thin-film semiconductor device layers with nanostructured metal/dielectric rear contacts to increase optical absorption via coupling to both Fabry-Perot resonances and guided lateral propagation modes in the semiconductor. The roles of Fabry-Perot resonances and coupling to guided modes are analyzed via photocurrent response measurements and numerical modeling for light incident at angles of 0° (normal incidence) to 30° off normal. Light trapping enables external quantum efficiency at long wavelengths as high as 2.9% per quantum well to be achieved experimentally, substantially exceeding the ∼1% per quantum well level typically observed. Increased long wavelength quantum efficiency is shown in experimental measurements to persist with increasing angle of incidence and is explained as a consequence of the large number of guided modes available in the device structure.
14.5%%20conversion%20efficiency%20GaAs%20solar%20cell%20fabricated%20on%20Si%20substrates
DOI：
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发表时间：
1986
期刊：
影响因子：
--
作者：
Y. Itoh;T. Nishioka;A. Yamamoto;M. Yamaguchi
通讯作者：
M. Yamaguchi
具有背面陷光结构的薄膜 Ingaas/gaas 量子阱太阳能电池的计算分析参考文献和链接
DOI：
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作者：
C. McPheeters;E. T. Yu;H. W. J. Shockley;Queisser;K. M. W. J. Mazzer;I. M. Barnham;A. Ballard;A. Bessiere;D. C. Ioannides;M. C. Johnson;T. N. D. Lynch;J. Tibbits,;G. Roberts;C. Hill;Calder;J G J Adams;B. Browne;I. Ballard;J. P. Connolly;N. L. A. Chan;A. Ioannides;W. Elder;P. Stavrinou;K. Barnham;N. Ekins‐Daukes;R M Farrell;C. Neufeld;S. C. Cruz;J. R. Lang;M. Iza;S. Keller;S. Nakamura;S. Denbaars;U. Mishra;J. Speck;A Freundlich;A. Fotkatzikis;L. Bhusal;L. Williams;A. Alemu;W. Zhu;J. Coaquira;A. Feltrin;G. Radhakrishnan;R B Laghumavarapu;M. El;N. Nuntawong;A. Moscho;L. F. Lester;D. Huffaker;S M Hubbard;C. Cress;C. G. Bailey;R. Raffaelle;S. G. Bailey;D. Wilt;C G Bailey;D. V. Forbes;S. Hubbard;V Popescu;G. Bester;M. C. Hanna;A. Norman;A. Zunger;M Law;L. E. Greene;J. C. Johnson;R. Saykally;P. Yang;L Tsakalakos;J. Balch;J. Fronheiser;B. Korevaar;O. Sulima;J. Rand;J Kupec;R. Stoop;B. Witzigmann;Wei;K. Shiu;N. Giebink;S. R. Forrest;S P Bremner;R. Corkish;C. Honsberg;P Spinelli;V. Ferry;J. van de Groep;M. van Lare;M. Verschuuren;R. Schropp;H. Atwater;A. Polman;I Serdiukova;C. Monier;M. Vilela;A. Freundlich;A Alemu;J J Schermer;P. Mulder;G. Bauhuis;M. Voncken;J. van Deelen;E. Haverkamp;P. K. Larsen;D Shahrjerdi;S. Bedell;C. Ebert;C. Bayram;B. Hekmatshoar;K. Fogel;P. Lauro;M. Gaynes;T. Gokmen;J. A. Ott;D. Sadana;C O Mcpheeters;D. Hu;D. Schaadt;E. T. Yu;C. Hill;S. Lim;D. Derkacs;D. Ting;C J Hwang;H C Casey;B. I. Miller;E. Pinkas;G J Bauhuis;J. Schermer;E. Haverkamp;J. Huijben;J. Soller;D. G. Hall;D Derkacs;W. V. Chen;P. Matheu;P. Yu;J Zou;D. Cockayne;B. Usher;Chen;P. Bhattacharya;J. Singh
通讯作者：
J. Singh
DOI：
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发表时间：
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影响因子：
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作者：
V. Ferry;M. Verschuuren;Hongbo B T Li;E. Verhagen;R. Walters;R. Schropp;H. Atwater;A. Polman
通讯作者：
V. Ferry;M. Verschuuren;Hongbo B T Li;E. Verhagen;R. Walters;R. Schropp;H. Atwater;A. Polman