Fabrication of a high performance ZnIn2S4/Si heterostructure photodetector array for weak signal detection

Fabrication of a high performance ZnIn2S4/Si heterostructure photodetector array for weak signal detection
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用于弱信号检测的高性能 ZnIn2S4/Si 异质结构光电探测器阵列的制造

DOI:
10.1039/c8tc04692a
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发表时间:
2018-12
影响因子:
6.4
通讯作者:
Li Jingbo
Li Jingbo
中科院分区:
材料科学2区
文献类型:
--
作者:
Zheng Zhaoqiang;Yao Ji;ong;Li Weijia;Huang Le;Xiao Ye;Mu Zhongfei;Yang Guowei;Li Jingbo

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Owing to their exciting electronic and optical attributes, layered materials have attracted great interest in the field of next-generation photodetectors. However, owing to their large dark current, low detectivity and small signal-to-noise ratio, the performance of photodetectors based merely on layered materials is unsatisfactory for use in weak signal detection. Integrating layered materials with mature silicon (Si) technology offers a feasible scenario to overcome these drawbacks. Herein, we report the facile synthesis of layered ZnIn2S4 nanosheets and the construction of a ZnIn2S4/Si heterostructure photodetector array for weak signal detection. Owing to the interfacial charge transfer, which significantly suppresses the dark current and accelerates the separation of the photoexcited electron–hole pairs, the fabricated ZnIn2S4/Si photodetector array presents an ultralow dark current (18 pA), superior signal-to-noise ratio (11 572), stable photoswitching and high detectivity (2 × 1012 Jones). Notably, the heterostructure device exhibits an outstanding weak signal detection capability, which has been successfully demonstrated using the detection of weak light sources including a cell phone screen, flashlight and lighter. These results demonstrate that the synergetic effect of layered materials and mature semiconductor technology shows great potential for application in next-generation optoelectronics.
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