Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films
Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films
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CdS层与CdSe量子点敏化电沉积ZnO纳米线薄膜的界面钝化
DOI：
10.1016/j.electacta.2013.05.069
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发表时间：
2013-09
影响因子：
6.6
通讯作者：
Yuan Lin
中科院分区：
文献类型：
--
作者：
Jingbo Zhang;Chuanzhen Sun;Shouli Bai;Ruixian Luo;Aifan Chen;Lina Sun;Yuan Lin
采用一步电化学沉积法制备了具有纳米线结构的ZnO多孔薄膜。采用连续离子层吸附反应（SILAR）法在ZnO纳米线薄膜表面涂覆CdS层，钝化表面态。然后用CdSe量子点（QDs）进一步敏化薄膜，作为光阳极用于制造量子点敏化太阳能电池（QDSSCs）。通过改变SILAR循环次数和加热钝化层，系统地研究了CdS界面钝化层对QDSSCs性能的影响。优化厚度的非晶CdS层可以有效抑制注入电子与量子点上空穴和氧化还原电解质的复合。在钝化ZnO纳米线薄膜表面新形成的CdS层明显延长了钝化ZnO纳米孔薄膜中的电子寿命，这是因为CdS沉积后ZnO纳米线中的表面陷阱密度较低，有利于提高短路光电流密度（Jsc）。对于具有界面钝化层的CdSe qds敏化ZnO纳米孔薄膜，jscd转换效率最高，分别达到8.36 mA cm−2和2.36%。与未钝化CdS界面的CdSe qds敏化ZnO纳米孔薄膜相比，转换效率提高了83.47%（0.39%）。
ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (Jsc). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, theJscand conversion efficiency can reach a maximum of 8.36 mA cm−2and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%).
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影响因子：
3.9
作者：
A. Zaban;O. Mićić;A. B. T. Gregg;A. Nozik
通讯作者：
A. Zaban;O. Mićić;A. B. T. Gregg;A. Nozik
影响因子：
19
作者：
Baker, David R.;Kamat, Prashant V.
通讯作者：
Kamat, Prashant V.
影响因子：
3.7
作者：
and T. Pauporté;J. Rathouský
通讯作者：
and T. Pauporté;J. Rathouský
影响因子：
56.9
作者：
Tsukazaki, A.;Ohtomo, A.;Kawasaki, M.
通讯作者：
Kawasaki, M.
影响因子：
4
作者：
大友 明
通讯作者：
大友 明