The effect of dielectric constants on noble metal/semiconductor SERS enhancement: FDTD simulation and experiment validation of Ag/Ge and Ag/Si substrates.
The effect of dielectric constants on noble metal/semiconductor SERS enhancement: FDTD simulation and experiment validation of Ag/Ge and Ag/Si substrates.
复制标题
介电常数对贵金属/半导体 SERS 增强的影响：Ag/Ge 和 Ag/Si 基板的 FDTD 模拟和实验验证
DOI：
10.1038/srep04052
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发表时间：
2014-02-11
影响因子：
4.6
通讯作者：
Shao M
中科院分区：
文献类型：
--
作者：
Wang T;Zhang Z;Liao F;Cai Q;Li Y;Lee ST;Shao M
采用时域有限差分法（FDTD）模拟了贵金属（Au或Ag）/半导体（Ge或Si）衬底的电场分布。模拟结果表明，贵金属/Ge比贵金属/Si具有更强的Sers增强作用，这主要归因于半导体材料的介电常数不同。为了验证模拟结果，我们选取了直径约为100 nm的Ag纳米颗粒作为模拟样品。在Ge或Si晶片（Ag/Ge或Ag/Si）上生长40 nm的纳米晶体，并用作表面增强拉曼散射基底以检测溶液中的分析物。实验结果表明，两种基质在低浓度罗丹明6 G的检测中均表现出良好的性能。此外，Ag/Ge衬底的增强因子（1.3 × 109）和相对标准偏差（小于11%）均优于Ag/Si衬底（分别为2.9 × 107和小于15%），这与FDTD模拟结果一致。此外，银纳米粒子在Ge衬底上原位生长，避免了纳米粒子在检测过程中的聚集。在贵金属/半导体基片中，Ag/Ge基片的灵敏度和均匀性最好。
The finite-difference time-domain (FDTD) method was employed to simulate the electric field distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation showed that noble metal/Ge had stronger SERS enhancement than noble metal/Si, which was mainly attributed to the different dielectric constants of semiconductors. In order to verify the simulation, Ag nanoparticles with the diameter of ca. 40 nm were grown on Ge or Si wafer (Ag/Ge or Ag/Si) and employed as surface-enhanced Raman scattering substrates to detect analytes in solution. The experiment demonstrated that both the two substrates exhibited excellent performance in the low concentration detection of Rhodamine 6G. Besides, the enhancement factor (1.3 × 109) and relative standard deviation values (less than 11%) of Ag/Ge substrate were both better than those of Ag/Si (2.9 × 107and less than 15%, respectively), which was consistent with the FDTD simulation. Moreover, Ag nanoparticles were grownin-situon Ge substrate, which kept the nanoparticles from aggregation in the detection. To data, Ag/Ge substrates showed the best performance for their sensitivity and uniformity among the noble metal/semiconductor ones.
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