Phase evolution of ultra-thin Ni silicide films on CF4 plasma immersion ion implanted Si

Phase evolution of ultra-thin Ni silicide films on CF4 plasma immersion ion implanted Si
复制标题

CF4等离子体浸没离子注入Si上超薄硅化镍薄膜的相演化

DOI:
10.1088/1361-6528/ab6d21
复制
发表时间:
2020-01
期刊:
影响因子:
3.5
通讯作者:
Qing-Tai Zhao
Qing-Tai Zhao
中科院分区:
材料科学3区
文献类型:
--
作者:
Lan-Tian Zhao;Mingshan Liu;Qing-Hua Ren;Chen-He Liu;Qiang Liu;Ling-Li Chen;Yohann Spiegel;Frank Torregrosa;Wenjie Yu;Qing-Tai Zhao

文献摘要

参考文献

相似文献

We present a systematic study on the effects of CF4 plasma immersion ion implantation (PIII) in Si on the phase evolution of ultra-thin Ni silicides. For 3 nm Ni, NiSi2 was formed on Si substrates with and without CF4 PIII at temperature as low as 400 °C.
DOI: 10.1063/1.333021
发表时间: 1984-01-01
影响因子: 3.2
作者:
DHEURLE, F;PETERSSON, CS;WONG, CY
通讯作者: WONG, CY
DOI: 10.1088/0957-4484/21/10/105701
发表时间: 2010-03
期刊: Nanotechnology
影响因子: 3.5
作者:
S. Habicht;Qing-Tai Zhao;S. Feste;Lars Knoll;Stefan Trellenkamp;B. Ghyselen;S. Mantl
通讯作者: S. Habicht;Qing-Tai Zhao;S. Feste;Lars Knoll;Stefan Trellenkamp;B. Ghyselen;S. Mantl
DOI: 10.1143/jjap.46.1830
发表时间: 2007-04
影响因子: 1.5
作者:
M. Tsuchiaki;A. Nishiyama
通讯作者: M. Tsuchiaki;A. Nishiyama
DOI: 10.1063/1.3384997
发表时间: 2010-04
影响因子: 4
作者:
K. D. Keyser;C. V. Bockstael;R. Meirhaeghe;C. Detavernier;E. Verleysen;H. Bender;W. Vandervorst;J. Jordan-Sweet;C. Lavoie
通讯作者: K. D. Keyser;C. V. Bockstael;R. Meirhaeghe;C. Detavernier;E. Verleysen;H. Bender;W. Vandervorst;J. Jordan-Sweet;C. Lavoie
DOI: 10.1007/978-94-009-0657-0_20
发表时间: 1983-02
影响因子: 8.6
作者:
R. T. Tung;J. Gibson;J. Poate
通讯作者: R. T. Tung;J. Gibson;J. Poate