Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy
Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy
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固源分子束外延形成的 SOI 基 SiGe 薄膜中与本征缺陷相关的空穴生成
DOI：
10.1063/1.5004077
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发表时间：
2018
影响因子：
3.2
通讯作者：
K. Nakagawa
中科院分区：
文献类型：
--
作者：
Motoki Satoh;K. Arimoto;J. Yamanaka;K. Sawano;Y. Shiraki;K. Nakagawa
由于绝缘体上硅锗（SGOI）结构作为一种重要的电子材料，其电子特性一直是人们研究的热点。在以前的研究中，即使在没有外部化学受体的情况下，在SGOI中也观察到p型导电，这对于器件应用是一个严重的问题。本文报道了SGOI形成过程中与本征缺陷相关的受主态的电学性质。结果表明，在低于10 K的温度下，很难实现冻结，这表明低温下费米能级位于价带附近。为了消除这些缺陷，在N2环境中在1050 °C下进行热退火12小时。结果表明，热处理能有效地降低受主态密度，提高晶体质量。
The electronic properties of SiGe on insulator (SGOI) structure are under intense investigation due to its importance as an electronic material. In the previous investigations, a p-type conduction was observed in SGOI even in the absence of extrinsic chemical acceptors, which is a serious problem for device applications. In this paper, the electrical properties of intrinsic-defect-related acceptor states generated during the SGOI formation are reported. It is found that freeze-out is hard to be achieved even at temperatures below 10 K, which indicates that the Fermi level lies near the valence band at low temperatures. With an aim to annihilate these defects, thermal annealing at 1050 °C for 12 h in N2 ambient was carried out. It was found that the thermal treatment is effective in reducing the densities of the acceptor states and in improving the crystalline quality.
影响因子：
2.3
作者：
Shimura, Takayoshi;Ogiwara, Shimpei;Watanabe, Heiji
通讯作者：
Watanabe, Heiji
通过Ge在绝缘体上硅衬底上热扩散制备均质绝缘体上硅Ge
DOI：
--
发表时间：
2003
期刊：
Jpn. J. Appl. Phys. 42
影响因子：
--
作者：
K.Kutsukake;N.Usami;K.Fujiwara;T.Ujihara;G.Sazaki et al.
通讯作者：
G.Sazaki et al.