T2-weighted 3D fMRI using S2-SSFP at 7 tesla.
T2-weighted 3D fMRI using S2-SSFP at 7 tesla.
复制标题
DOI:
10.1002/mrm.22283
复制
发表时间:
2010-04
影响因子:
3.3
通讯作者:
Norris, David G.
中科院分区:
文献类型:
--
作者:
Barth, Markus;Meyer, Heiko;Kannengiesser, Stephan A. R.;Polimeni, Jonathan R.;Wald, Lawrence L.;Norris, David G.
In this study the sensitivity of the S2-SSFP (steady-state free precession) signal for functional MRI (fMRI) at 7 Tesla was investigated. In order to achieve the necessary temporal resolution, a 3D acquisition scheme with acceleration along two spatial axes was employed. Activation maps based on S2-SSFP data showed similar spatial localisation of activation and sensitivity as spin-echo echo-planar imaging (SE-EPI) but data can be acquired with substantially lower power deposition. The functional sensitivity estimated by the average z-values was not significantly different for SE-EPI compared to the S2-signal, however slightly lower for the S2-signal (6.74 ± 0.32 for the TR = 15 ms protocol, and 7.51 ± 0.78 for the TR = 27 ms protocol) compared to SE-EPI (7.49 ± 1.44 and 8.05 ± 1.67) using the same activated voxels, respectively. The relative signal changes in these voxels upon activation were slightly lower for SE-EPI (2.37%± 0.18%) compared to the TR = 15 ms S2-SSFP protocol (2.75%± 0.53%) and significantly lower than the TR = 27 ms protocol (5.38% ± 1.28%) in line with simulations results. The large relative signal change for the long TR SSFP protocol can be explained by contributions from multiple coherence pathways, and the low intrinsic intensity of the S2 signal. In conclusion, whole-brain T2-weighted fMRI with negligible image distortion at 7 Tesla is feasible using the S2-SSFP sequence and partially parallel imaging.
登录
查看更多内容
影响因子:
2.9
作者:
Barth, M.;Norris, D. G.
通讯作者:
Norris, D. G.
影响因子:
3.3
作者:
Yacoub, E;Duong, TQ;Hu, XP
通讯作者:
Hu, XP
影响因子:
5.7
作者:
Miller, Karla L.;Smith, Stephen M.;Wiggins, Christopher J.
通讯作者:
Wiggins, Christopher J.
影响因子:
3.3
作者:
Griswold, MA;Jakob, PM;Haase, A
通讯作者:
Haase, A
影响因子:
2.9
作者:
Voit, D;Frahm, J
通讯作者:
Frahm, J