Improvement of ferroelectricity and endurance in Sr doped Hf0.5Zr0.5O2 films
Improvement of ferroelectricity and endurance in Sr doped Hf0.5Zr0.5O2 films
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Sr 掺杂 Hf0.5Zr0.5O2 薄膜铁电性和耐久性的改善
DOI：
10.1016/j.jallcom.2022.165301
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发表时间：
2022-05
影响因子：
6.2
通讯作者：
Yichun Zhou
中科院分区：
文献类型：
--
作者：
Lu Yin;Shiqi Gong;Xinyu Li;Binbin Lu;Qiangxiang Peng;Shuaizhi Zheng;Min Liao;Yichun Zhou
Hf0.5Zr0.5O2的掺杂由于其结构和铁电性能的进一步调整而受到越来越多的关注。采用化学溶液沉积法在Pt/Ti/SiO2/Si衬底上制备了Sr掺杂Hf 0.5Zr0.5O2（Sr：HZO）铁电薄膜，研究了Sr掺杂对薄膜结构和铁电性能的影响。结果表明，Sr掺杂在较低含量（≤0.50%）时能进一步促进铁电正交相的形成，从而提高铁电性。Sr掺杂0.5 0%的HZO薄膜具有最佳的铁电性，其反射极化强度为14.6 3 μC/cm 2，矫顽场强度为1.0 8 MV/cm。随着Sr含量的增加，漏电流密度降低，这主要是由于晶粒尺寸的增加导致晶界减少。最重要的是，Sr掺杂引起的耐久性的改善，和一个良好的耐久性的10 - 9个周期没有击穿是在0.50%的Sr掺杂样品中实现。这些结果表明，Sr是一个潜在的候选掺杂剂，用于改善HZO薄膜的结构和铁电性能。首次研究了Sr掺杂对Hf0.5Zr0.5O2薄膜结构和铁电性能的影响。· Sr掺杂可以进一步促进铁电正交相的形成。·适当含量的Sr掺杂可提高铁电性和耐久性。
The doping of Hf 0.5 Zr 0.5 O 2 has attracted increasing attention because of the further regulation of structure and ferroelectric properties. Here, Sr doped Hf 0.5 Zr 0.5 O 2 (Sr:HZO) ferroelectric films have been prepared by chemical solution deposition on Pt/Ti/SiO 2 /Si substrate, and the effect of Sr doping on the structure and ferroelectric properties of Sr:HZO films was investigated. It is observed that Sr doping can further promote the formation of ferroelectric orthorhombic phase at low content (≤0.50%), inducing the enhancement of ferroelectricity. And the optimal ferroelectricity with remanent polarization of 14.63 μC/cm 2 and coercive field of 1.08 MV/cm is achieved in the 0.50% Sr doped HZO film. The decrease in leakage current density with increasing Sr content is observed, which is mainly ascribed to the reduction of grain boundaries caused by the increase of grain size. Most significantly, Sr doping induces an improvement in the endurance, and a good endurance of 10 9 cycles without breakdown is achieved in the 0.50% Sr doped sample. These findings indicate that Sr is a potential candidate dopant for improving the structure and ferroelectric properties of HZO films. • The effect of Sr doping on the structure and ferroelectric properties of Hf 0.5 Zr 0.5 O 2 films is first investigated. • Sr doping can further promote the formation of ferroelectric orthorhombic phase at low content. • Sr doping induces an improvement in the ferroelectricity and endurance at proper content.
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影响因子：
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作者：
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