Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange
Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange
复制标题
通过铝诱导的层交换在玻璃上选择性形成大晶粒（100）或（111）取向的硅
DOI：
10.1063/1.4867218
复制
发表时间：
2014
影响因子：
3.2
通讯作者：
T. Suemasu
中科院分区：
文献类型：
--
作者：
K. Toko;Ryohei Numata;N. Saitoh;N. Yoshizawa;N. Usami;T. Suemasu
通过控制硅的厚度和铝诱导结晶的退火温度，我们控制了在玻璃上生长的多晶硅（poly-Si）晶粒（100）和（111）取向的比例。改变晶体取向比例对多晶硅层的平均晶粒尺寸有较大影响。在375℃的温度下，用50 nm厚的Si层生长出99%（111）取向的多晶硅层，制备出晶粒尺寸接近40 μm的Si层。我们从(100)-取向核和（111）取向核之间竞争的角度讨论了其生长机制。这一成就有望在廉价的玻璃基板上制造高效率的薄膜太阳能电池。
By controlling the Si thickness and the annealing temperature used for Al-induced crystallization, we controlled the fraction of (100) and (111) orientations of polycrystalline Si (poly-Si) grains grown on glass. Changing the proportions of crystal orientation strongly influenced the average grain size of the poly-Si layer. By growing a 99% (111)-oriented poly-Si layer, formed with a 50-nm-thick Si layer at 375 °C, we produced a Si layer with grains nearly 40 μm in size. We discuss the growth mechanism from the perspective of competition between (100)- and (111)-oriented nuclei. This achievement holds promise for fabricating high-efficiency thin-film solar cells on inexpensive glass substrates.
铝诱导结晶法(111)取向硅层在SiO_2衬底上生长半导体BaSi_2的光响应性能
DOI：
--
发表时间：
2009
期刊：
Applied Physics Express 2
影响因子：
--
作者：
D. Tsukada;Y. Matsumoto;R. Sasaki;M. Takeishi;T. Saito;N. Usami and T. Suemasu
通讯作者：
N. Usami and T. Suemasu
影响因子：
1.5
作者：
Y. Sugimoto;N. Takata;Takeshi Hirota;K. Ikeda;F. Yoshida;H. Nakashima;H. Nakashima
通讯作者：
Y. Sugimoto;N. Takata;Takeshi Hirota;K. Ikeda;F. Yoshida;H. Nakashima;H. Nakashima