de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu3Sn
de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu3Sn
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德哈斯-范阿尔芬效应和可能的拓扑锡化物Cu3Sn的第一性原理研究
DOI:
10.1016/j.jallcom.2022.167017
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发表时间:
2022-09
影响因子:
6.2
通讯作者:
Wen-He Jiao
中科院分区:
文献类型:
--
作者:
Chengxu Liu;Bin Li;Yongheng Ge;Chuanying Xi;Yi Liu;Chunqiang Xu;Qi Lu;Yunlong Li;Hang-Qiang Qiu;Qin-Qing Zhu;Yu-Ke Li;Zhi Ren;Ziming Zhu;Dong Qian;Xianglin Ke;Xiaofeng Xu;Wen-He Jiao
The search for quantum materials with various symmetry-protected topological states has been the focus of recent research interest, primarily due to their fascinating physical properties and the potential technological utility. In this work, we report on the magnetotransport, de Haas-van Alphen (dHvA) oscillations, and the first-principles calculations of the stannide Cu 3 Sn that is isostructural with the recently reported topological semimetal Ag 3 Sn. The magnetoresistance was found to vary quasi-linearly in field. Clear dHvA oscillations were observed under a field as low as 1 Tesla at 2 K, with three major oscillation frequencies F α = 8.74▒T, F β = 150.19▒T and F γ = 229.66▒T and extremely small effective masses. The analysis of dHvA quantum oscillations revealed a possible nonzero Berry phase, suggestive of the nontrivial band topology. The corroborating evidence for the nontrivial electronic topology also comes from the first-principles calculations which yield a nonzero Z 2 topological index. These results collectively suggest that Cu 3 Sn, in analogy to its homologue Ag 3 Sn, may be another intermetallic stannide hosting topological Dirac fermions. • The high-quality single crystals of the intermetallic Cu 3 Sn that can be utilized in the lead-free soldering and potentially used to substitute the graphite anodes of Lithium ion batteries, are synthesized. The topological properties have been revealed for the first time, both experimentally and theoretically. • We report on the anomalous magnetotransport, quantum de Haas-van Alphen oscillations, and the first-principles calculations of the layered stannide Cu 3 Sn. • By multiple techniques, we provide the thermodynamic and computational evidence for the existence of topological carriers in this stannide, which may offer a fertile platform that is in equal measure of applied and fundamental interest.
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影响因子:
0.8
作者:
W. Burkhardt;K. Schubert
通讯作者:
W. Burkhardt;K. Schubert
影响因子:
3.7
作者:
Kumar, Nitesh;Guin, Satya N.;Shekhar, Chandra
通讯作者:
Shekhar, Chandra
DOI:
10.1107/s0365110x56002990
发表时间:
1956-12
期刊:
Acta Crystallographica
影响因子:
--
作者:
H. Hendus;H. Knödler
通讯作者:
H. Hendus;H. Knödler
影响因子:
16.6
作者:
通讯作者:
--
影响因子:
3.7
作者:
Hu, Jin;Tang, Zhijie;Mao, Zhiqiang
通讯作者:
Mao, Zhiqiang