Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor.
Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor.
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DOI：
10.1038/ncomms2106
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发表时间：
2012
影响因子：
16.6
通讯作者：
中科院分区：
文献类型：
--
作者：
线性横向磁阻常见于许多材料系统中，包括半金属、窄带隙半导体、多层石墨烯和拓扑绝缘体。它可能源于载流子迁移率的宏观空间波动引起的电流路径的畸变而产生于非均匀导体，并且已经使用唯象半经典随机电阻网络模型对其进行了解释。然而，线性磁阻与电子动力学微观性质之间的联系仍然未知。在这里，我们演示了线性磁阻是如何由高迁移率非均匀导体中低迁移率岛周围的电子摆线轨迹的随机行为产生的，并且该过程仅受所施加的电场强度的微弱影响。此外，我们还建立了岛形态与未来应用相关的线性磁阻强度之间的定量联系。线性磁阻是在许多材料系统中观察到的一种现象，可用于磁场传感器。本文揭示了它的微观起源，展示了它是如何由不均匀高迁移率半导体内的低迁移率岛对电子的多次散射产生的。
Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclassical random resistor network model. However, the link between the linear magnetoresistance and the microscopic nature of the electron dynamics remains unknown. Here we demonstrate how the linear magnetoresistance arises from the stochastic behaviour of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous conductors and that this process is only weakly affected by the applied electric field strength. Also, we establish a quantitative link between the island morphology and the strength of linear magnetoresistance of relevance for future applications. Linear magnetoresistance is a phenomenon observed in many material systems and could be used in magnetic field sensors. This paper uncovers its microscopic origin showing how it arises from multiple scattering of electrons by low-mobility islands within an inhomogeneous high-mobility semiconductor.
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影响因子：
41.2
作者：
Hu, Jingshi;Rosenbaum, T. F.
通讯作者：
Rosenbaum, T. F.
影响因子：
4
作者：
Drachenko, O.;Patane, A.;Helm, M.
通讯作者：
Helm, M.
DOI：
10.1088/0305-4470/36/35/301
发表时间：
2003-09-05
期刊：
JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL
影响因子：
--
作者：
Abrikosov, AA
通讯作者：
Abrikosov, AA
影响因子：
3.1
作者：
FISCHETTI, MV
通讯作者：
FISCHETTI, MV
影响因子：
10.8
作者：
Friedman, Adam L.;Tedesco, Joseph L.;Gaskill, D. Kurt
通讯作者：
Gaskill, D. Kurt