Size-controlled resistive switching performance and regulation mechanism of SnO2 QDs
Size-controlled resistive switching performance and regulation mechanism of SnO2 QDs
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SnO2量子点的尺寸控制阻变性能及调控机制
DOI：
10.7498/aps.70.20210608
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发表时间：
2021-10
影响因子：
1
通讯作者：
Wen Chen
中科院分区：
文献类型：
--
作者：
Gong Shao-Kang;Jing Zhou;Wang Zhi-Qing;Zhu Mao-Cong;Jie Shen;Zhi Wu;Wen Chen
作为一种非易失性存储器，零维量子点电阻式随机存储器（RRAM）以其结构简单、开关电压低、响应速度快、存储密度高、功耗低等优点，在智能电子器件领域显示出广阔的应用前景。二氧化锡量子点（SnO 2 QD）具有优异的物理和化学稳定性、高电子迁移率和可调节的能带结构，是电阻功能材料的良好选择。本文采用溶剂热法制备了尺寸分别为2.51 nm、2.96 nm和3.53 nm的SnO 2量子点，在小尺寸范围内观察到量子尺寸效应，并利用量子尺寸效应实现阻变电压的有效调控，这是量子点材料相对于体材料的独特优势。研究结果表明，随着SnO 2量子点尺寸的增大，其SET/RESET电压从-3.18 V/4.35 V逐渐降低到-2.02 V/3.08 V。3.53 nm的SnO 2量子点具有较低的SET/RESET电压（-2.02 V/3.08 V）和更大的阻变比（> 104），器件经过2 × 104次耐久性试验，阻变性能变化小于5%，具有良好的稳定性和保持性。此外，根据电荷输运机制的拟合，SnO 2 QD RRAM在LRS下表现为欧姆导电，而在HRS下欧姆导电、电子发射和空间电荷极限电流共同作用。SnO 2量子点的阻变效应受陷阱填充极限电流和界面肖特基势垒调制的控制; SnO 2量子点内部缺陷势阱对电子的俘获/脱陷行为主导HRS/LRS开关，而ITO/SnO 2量子点和SnO 2量子点/Au界面肖特基势垒的有效控制是精确调节开关电压的关键。SnO 2量子点RRAM具有良好的尺寸-开关电压依赖性的原因是较大的SnO 2量子点具有较低的费米能级和界面肖特基势垒高度，因此结电阻分压减小，SET/SET电压相应降低。本工作揭示了SnO 2量子点在阻变存储器领域的巨大应用潜力和商业应用价值，为阻变存储器的发展提供了新的选择。
As a non-volatile memory, zero-dimensional quantum dot resistive random access memory (RRAM) has shown broad application prospects in the field of intelligent electronic devices due to its advantages of simple structure, low switching voltage, fast response speed, high storage density, and low power consumption. Tin dioxide quantum dots (SnO2 QDs) are a good option for resistive functional materials with excellent physical and chemical stabilities, high electron mobilities, and adjustable energy band structures. In this paper, the SnO2 QDs with sizes of 2.51 nm, 2.96 nm and 3.53 nm are prepared by the solvothermal method, and the quantum size effect is observed in a small size range and the effective regulation of resistive switching voltage is achieved based on its quantum size effect, which is the unique advantage of quantum dot material in comparison with that of bulk material. Research result shows that as the size of SnO2 QD increases, the SET/RESET voltage gradually decreases from –3.18 V/4.35 V to –2.02 V/3.08 V. The 3.53 nm SnO2 QDs have lower SET/RESET voltage (–2.02 V/3.08 V) and larger resistive switching ratio (> 104), and the resistive switching performance of the device has changed less than 5% after having experienced durability tests 2 × 104 times, showing good stability and retention. Besides, according to the fitting of charge transport mechanism, SnO2 QD RRAM exhibits Ohmic conduction under LRS, while Ohmic conduction, thermionic emission and space charge limit current work together during HRS. The resistive switching effect of SnO2 QDs is controlled by trap filled limit current and interface Schottky Barrier modulation; the trapping/de-trapping behavior of internal defect potential well of SnO2 QDs on electrons dominates the HRS/LRS switching, while the effective control of ITO/SnO2 QDs and SnO2 QDs/Au interface Schottky barrier is the key to accurately regulating the switching voltage. The reason why SnO2 QD RRAM exhibits good size-switching voltage dependence is that the larger SnO2 QD has lower Fermi level and interface Schottky barrier height, so the junction resistance voltage division is reduced, and the SET/RESET voltage decrease accordingly. This work reveals the huge application potential and commercial application value of SnO2 QDs in the field of resistive switching memory, and provides a new option for the development of RRAM.
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