Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes.
Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes.
复制标题
DOI：
10.1038/s41598-017-18833-6
复制
发表时间：
2018-01-11
影响因子：
4.6
通讯作者：
Feezell DF
中科院分区：
文献类型：
--
作者：
Nami M;Stricklin IE;DaVico KM;Mishkat-Ul-Masabih S;Rishinaramangalam AK;Brueck SRJ;Brener I;Feezell DF
在这项工作中，我们展示了高性能的电注入GaN/InGaN核-壳外延基于LEDs的选择性区域外延生长，并表征其电光特性。为了评估量子威尔斯的质量，我们使用传统的低温/室温集成光致发光测量内部量子效率（IQE）。量子威尔斯显示出62%的峰值IQE，这是基于纳米结构的LED的最高报告值之一。时间分辨光致发光（TRPL）也被用来研究载流子动力学和响应时间的LED。TRPL测量产生的载流子寿命在1-2纳秒的范围内，在高激发功率。为了检查LED的电性能，测量电流密度-电压（J-V）和光电流密度-电压（L-J-V）特性。我们还估计，在没有封装的情况下，芯片的单侧的峰值外量子效率（EQE）为8.3%。LED具有2.9 V的开启电压和低串联电阻。基于FDTD模拟，LED在15°范围内表现出相对定向的远场发射图案。这项工作表明，它是可行的电注入的基于发光二极管，以实现各种光学器件应用所需的性能水平。
In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1–2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density–voltage (J-V) and light-current density-voltage (L-J-V) characteristics are measured. We also estimate the peak external quantum efficiency (EQE) to be 8.3% from a single side of the chip with no packaging. The LEDs have a turn-on voltage of 2.9 V and low series resistance. Based on FDTD simulations, the LEDs exhibit a relatively directional far-field emission pattern in the range of 15°. This work demonstrates that it is feasible for electrically injected nanowire-based LEDs to achieve the performance levels needed for a variety of optical device applications.
登录
查看更多内容
影响因子：
3.8
作者：
Cossu, G.;Khalid, A. M.;Ciaramella, E.
通讯作者：
Ciaramella, E.
影响因子：
3.5
作者：
Behzadirad, Mahmoud;Nami, Mohsen;Busani, Tito
通讯作者：
Busani, Tito
影响因子：
1.6
作者：
Coulon, Pierre-Marie;Alloing, Blandine;Zuniga-Perez, Jesus
通讯作者：
Zuniga-Perez, Jesus
影响因子：
4.7
作者：
Haas, Harald;Yin, Liang;Chen, Cheng
通讯作者：
Chen, Cheng
影响因子：
15
作者：
Duan, XF;Lieber, CM
通讯作者：
Lieber, CM