Comparative study on substitution effects in BiFeO3 thin films fabricated on FTO substrates by chemical solution deposition
Comparative study on substitution effects in BiFeO3 thin films fabricated on FTO substrates by chemical solution deposition
复制标题
化学溶液沉积法在FTO基底上制备BiFeO3薄膜的替代效应比较研究
DOI:
10.1016/j.apsusc.2013.05.147
复制
发表时间:
2013-10
影响因子:
6.7
通讯作者:
Ren, Huijun
中科院分区:
文献类型:
--
作者:
Xue, Xu;Tan, Guoqiang;Hao, Hangfei;Ren, Huijun
Pure BiFeO3(BFO), BiFe0.97Co0.03O3−δ(BFCO) and Bi0.90Gd0.10Fe0.97Co0.03O3−δ(BGFCO) thin films were successfully deposited on FTO substrates by chemical solution deposition technique. The field emission scanning electron microscope reveals that the surface morphology of the BGFCO thin film becomes more compact and uniform than that of the other two films. A slight lattice distortion is created in the BFCO thin film, whereas 10% Gd doping gives rise to tetragonal phase transition and (1 1 0) preferentially oriented film texture for the BGFCO thin film, as evidenced by Raman scattering spectra and X-ray diffraction analyses. X-ray photoelectron spectroscopy analyses clarify that Co-doping results in the increase of oxygen vacancy concentration in the BFCO film, while further introduction of Gd into the BFCO lattice can decrease oxygen vacancy concentration, and the concentrations of Fe2+ions in the BFCO and BGFCO thin films are less than that in the BFO counterpart. The BFCO film shows the improved remanent polarization (Pr) of 11.2 μC/cm2compared with that of 1.4 μC/cm2for the BFO film. The high breakdown strength, low leakage current density in the high electric filed, improved dielectric properties as well as the increased stereochemical activity of Bi ion lone electron pair of the BGFCO thin film all together contribute to the giantProf 139.6 μC/cm2at room temperature.
登录
查看更多内容
影响因子:
3.2
作者:
Z. Quan;Wei Liu-;Hao Hu;Sheng Xu;Bobby Sebo;G. Fang;Meiya Li;Xingzhong Zhao
通讯作者:
Z. Quan;Wei Liu-;Hao Hu;Sheng Xu;Bobby Sebo;G. Fang;Meiya Li;Xingzhong Zhao
影响因子:
6.2
作者:
Zaimei Yin;Jingjing Liu;Guangda Hu;Weibing Wu;Changhong Yang
通讯作者:
Changhong Yang
影响因子:
3.7
作者:
Guo, Renqing;Fang, Liang;Shen, Mingrong
通讯作者:
Shen, Mingrong
影响因子:
4
作者:
Das, R. R.;Kim, D. M.;Streiffer, S. K.
通讯作者:
Streiffer, S. K.
影响因子:
4.6
作者:
M. Nayak;S.Y Lee;T. Tseng
通讯作者:
M. Nayak;S.Y Lee;T. Tseng