Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin films
Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin films
复制标题
原子层沉积多晶 ZrO2 薄膜单极和双极阻变态的阻抗谱研究
DOI：
10.1002/pssa.201431489
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
S. Hoffmann-Eifert
中科院分区：
文献类型：
--
作者：
I. Kaerkkaenen;A. Shkabko;M. Heikkila;M. Vehkamaki;J. Niinisto;N. Aslam;P. Meuffels;M. Ritala;M. Leskela;R. Waser;S. Hoffmann-Eifert
用阻抗谱法研究了原子层沉积多晶zro2薄膜中金属-氧化物-金属器件的电阻开关（RS）特性的极性。Pt/ZrO2/Ti/Pt电池由10 nm Ti和30 nm Pt盖顶电极制成，作为单极开关（US）器件。双极开关（BS）器件采用Pt/ZrO2/30 nm TiN电池。ON - state电阻的温度测量分别清楚地显示了US和BS电池的金属和半导体行为。用阻抗谱法分析了器件的原始状态和开关状态。所有基于zro2的RS器件在原始状态下具有相似的阻抗特性。相比之下，电铸后，观察到US和BS装置的奈奎斯特图有明显差异。在考虑zro2薄膜柱状颗粒结构的情况下，讨论了器件结构对RS极性的影响。提出了一种基于zro2与非贵金属电极氧化还原反应的经验模型，强调zro2晶界处缺陷的优先形成。
The polarity of the resistive switching (RS) characteristic of metal‐oxide‐metal devices from atomic layer deposited polycrystalline ZrO2films was studied by means of impedance spectroscopy. Pt/ZrO2/Ti/Pt cells made with 10 nm Ti and 30 nm Pt capping top electrodes, served as unipolar switching (US) devices. Bipolar switching (BS) devices were represented by Pt/ZrO2/30 nm TiN cells. Temperature measurements of the ON‐state resistances clearly show metallic and semiconducting behavior for the US and BS cells, respectively. The pristine and the ON and OFF states of the devices were analyzed by means of impedance spectroscopy. All ZrO2based RS devices exhibited similar impedance characteristics in the pristine states. In contrast, after electroforming clear differences in the Nyquist‐plots of the US and BS devices were observed. The effect of the device structure on the RS polarity is discussed under consideration of the pillar‐shaped grainy microstructure of the ZrO2thin films. An empirical model based on redox reactions between ZrO2and the non‐noble metal electrode is proposed emphasizing defect formation prior at the ZrO2grain boundaries.
登录
查看更多内容
“激光分子束外延法室温生长 AIN/TiN 外延多层”固体薄膜
DOI：
--
发表时间：
2008
期刊：
Thin Solid Films 516
影响因子：
--
作者：
Miao Zhang;・広川 二郎・安藤 真;Wakana Hara;Wakana Hara
通讯作者：
Wakana Hara
影响因子：
4.6
作者：
Yanagida, Takeshi;Nagashima, Kazuki;Oka, Keisuke;Kanai, Masaki;Klamchuen, Annop;Park, Bae Ho;Kawai, Tomoji
通讯作者：
Kawai, Tomoji
影响因子：
3.2
作者：
I. Valov;V. Rührup;R. Klein;T. Rödel;A. Stork;S. Berendts;Mustafa Doğan;H. Wiemhöfer;M. Lerch;J. Janek
通讯作者：
I. Valov;V. Rührup;R. Klein;T. Rödel;A. Stork;S. Berendts;Mustafa Doğan;H. Wiemhöfer;M. Lerch;J. Janek
影响因子：
4.5
作者：
BONDARS, B;HEIDEMANE, G;FREY, F
通讯作者：
FREY, F
用于 Ta2O5 原子层沉积的高性能亚氨基-酰胺前驱体
影响因子：
1.9
作者：
T. Blanquart;V. Longo;J. Niinistö;Mikko J. Heikkilä;K. Kukli;M. Ritala;M. Leskelä
通讯作者：
M. Leskelä